可用于数据存储的Nb-Sb_(2)Te_(3)/C超晶格结构相变材料的研究  

Research on Nb-Sb_(2)Te_(3)/C superlattice phase change materials for data storage

作　　者：郑龙 薛建忠 裴明旭 朱小芹 ZHENG Long;XUE Jianzhong;PEI Mingxu;Zhu Xiaoqin(School of Mathematics and Physics,Jiangsu University of Technology,Changzhou 213001,China)

机构地区：[1]江苏理工学院数理学院,江苏常州213001

出　　处：《江苏理工学院学报》2025年第1期80-86,共7页Journal of Jiangsu University of Technology

基　　金：国家自然科学青年基金项目“Nb-Sb-Te/C稳定多阻态存算一体器件单元的探索研究”(12104192);国家自然科学基金面上项目“有序掺碳的超晶格存储结构性能优化及机理研究”(12074152)。

摘　　要：Nb掺杂的Sb_(2)Te_(3)(STNb)相变材料因其优异的热稳定性和快速的相变速率,被认为在数据存储领域具有潜在的应用价值。然而,随着Nb掺杂量的增加,体系易发生相分离现象,且Nb掺杂无法有效抑制材料的氧化,这对存储器件的长期稳定性提出了严峻挑战。鉴于碳(C)元素具有较高的化学稳定性,文章设计了一种由0.5 nm厚的C纳米层与STNb相变材料交替排列的超晶格结构。通过周期性插入C纳米层,引入了规则的界面结构,并系统研究了C纳米层数对STNb/C超晶格相变材料性能的影响。研究结果表明,由于界面效应的作用,超晶格结构的相变薄膜相较于单层结构表现出更高的相变温度,且体系的晶态电阻随C纳米层插入逐渐增加。此外,超晶格结构能够显著降低存储器件的操作电流,从而有效降低器件功耗。微观结构分析表明,相变后C元素主要以团簇形式存在于材料中,这不仅抑制了原子迁移和晶粒生长,还有助于进一步降低器件功耗。综上所述,STNb/C超晶格相变材料在数据存储领域展现出广阔的应用前景。Nb-doped Sb_(2)Te_(3)(STNb)phase change materials are considered to have potential application value in the field of data storage due to its excellent thermal stability and fast phase transition rate.However,with the increase of Nb doping,the system is prone to phase separation,and Nb doping cannot effectively suppress material oxidation,which poses a serious challenge to the long-term stability of storage devices.Given the high chemical stability of carbon(C)element,this article designs a superlattice structure consisting of alternating O.5 nm thick C nanolayers and STNb phase change materials.By periodically inserting C nanolayers,a regular interface structure is introduced,and the influence of C nanolayers on the properties of STNb/C superlattice phase change materials is systematically studied.The research results indicate that due to the interface effect,the phase change thin film with superlattice structure exhibits a higher phase transition temperature compared to the single-layer structure,and the crystalline resistance of the system gradually increases with the insertion of the C layer.In addition,superlattice structures can significantly reduce the operating current of storage devices,thereby effectively reducing device power consumption.Microstructure analysis shows that after phase transition,the C element mainly exists in the form of clusters in the material,which not only inhibits atomic migration and grain growth,but also helps to further reduce device power consumption.In summary,STNb/C superlattice phase change materials have shown broad application prospects in the field of data storage.

关 键 词：相变存储器 超晶格结构 C纳米层 相变材料 人工界面 

分 类 号：TB34[一般工业技术—材料科学与工程] TN020.1[电子电信—物理电子学]