High-performance deep ultraviolet light detectors composed of MXene/GaN heterostructures enabled by p-type doping of MXenes  

通过p型掺杂MXene实现基于MXene/GaN异质结构的高性能深紫外光电探测器

作　　者：Liangpan Yang Yu Cheng Deng Ke Shijie Xu Chao Xie Wenhua Yang Pengbin Gui Zhixiang Huang 杨良盼;程宇;柯登;徐世杰;谢超;杨文华;桂鹏彬;黄志祥

机构地区：[1]Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits,School of Electronics and Information Engineering,Anhui University,Hefei 230601,China

出　　处：《Science China Materials》2025年第4期1012-1021,共10页中国科学(材料科学)(英文版)

基　　金：financially supported by the National Natural Science Foundation of China(NSFC,62275002,51902078);the Anhui Provincial Natural Science Foundation(2008085MF205);the Fundamental Research Funds for the Central Universities(JZ2020HGTB0051)。

摘　　要：The performance enhancement of MXene/semiconductor heterostructure-based light detectors is greatly restricted by the relatively small junction barrier due to the limited work function of MXenes.The work function of MXenes can be largely adjusted to approach 600 meV through simple incorporation of V_(2)O_(5) via a charge transfer doping mechanism.Exploiting this strategy,the performance of MXene/GaN heterostructure-based deep ultraviolet(DUV)photodetectors has been greatly improved.Specifically,the photocurrent is enhanced by nearly 3 times,and the dark current is suppressed at the lowest order of magnitude,resulting in improved responsivity and specific detectivity of 121.6 mA/W and 2.23×10^(13) Jones,respectively,at 265 nm.The device also displays an ultralow dark current of 10^(-14) A,a fast response speed of 0.4 ms/15.1 ms,a large linear dynamic range exceeding 150 dB,and a high DUV/near ultraviolet rejection ratio of 2.41×10^(5).Owing to its good device performance,the detector is capable of sensing weak photon signals produced by a fire flame and functions as an optical receiver to transmit a text signal in a DUV light communication system.The proposed MXene doping method is expected to help develop MXene-based electronic/optoelectronic devices,and the present DUV photodetectors will find potential applications in DUV optoelectronic systems.由于MXene较低的功函数导致较小的异质结势垒,基于MXene/半导体异质结的光电探测器性能的提升受到了极大限制.本工作中,基于电荷转移掺杂机制,通过简单地混入V2O5,MXene的功函数可以大大提高将近600 meV.采用这种策略,可以极大提升基于MXene/GaN异质结构的深紫外光探测器的性能.特别地,光电流可以提高近3倍,暗电流被抑制至少一个数量级,使得265 nm波长处的光响应度和比探测率分别提升至121.6 mA/W和2.23×1013Jones.器件也呈现出10-14A的极低暗电流、0.4/15.1 ms的快速响应、超过150 dB的大的线性动态范围、以及高达2.41×10~5的深紫外/近紫外抑制比.得益于其优异的光电性能,该探测器能够感知由火焰产生的极弱的光信号,且能够作为深紫外光通讯系统中的光接收器实现文本信号的传送.本工作中的MXene掺杂方法有助于促进基于MXene的电子/光电子器件的发展,所构筑的深紫外光探测器有望在深紫外光电系统中有潜在应用.

关 键 词：MXene work function charge transfer doping deepultraviolet light detector 

分 类 号：TN36[电子电信—物理电子学]