Phosphorus-doped n-type diamond with high ionization efficiency through high-pressure thermal diffusion  

通过高压热扩散制备高电离效率的磷掺杂n型金刚石

作　　者：Ruiang Guo Shuaiqi Li Jiawei Zhang Yi Tian Weiguo Dong Duanwei He 郭睿昂;李帅;张佳威;田毅;董卫国;贺端威

机构地区：[1]Institute of Atomic and Molecular Physics,Sichuan University,Chengdu 610065,China [2]Key Laboratory of High Energy Density Physics and Technology of Ministry of Education,Sichuan University,Chengdu 610065,China [3]Beijing National Laboratory for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

出　　处：《Science China Materials》2025年第4期1196-1202,共7页中国科学(材料科学)(英文版)

基　　金：supported by the National Key Research and Development Program of China(2018YFA0305900 and 2023YFA1406200)。

摘　　要：Diamond is known as the ultimate semiconductor owing to its excellent physical properties.However,the high difficulty of n-type doping and the poor electrical performance of n-type diamonds remain major challenges for the application of diamond semiconductor materials.In this paper,a high-pressure thermal diffusion method for the n-type doping of diamond,which utilizes high pressure to reduce the volume difference between phosphorus atoms and carbon atoms,is reported for the first time.This method can achieve efficient doping and ionization of phosphorus atoms at the lattice sites of diamond.The prepared phosphorus-doped diamond exhibited the lowest resistivity(2Ωcm)and highest electron concentration(2.27×10^(18) cm^(-3))observed in any known phosphorus-doped diamond single crystal at room temperature(300 K).The high-pressure thermal diffusion method provides an effective approach for diamond n-type doping,which may play an important role in the design and preparation of future diamond-based semiconductor devices.金刚石因其优异的物理性能被称为终极半导体.然而,n型掺杂的高难度和n型金刚石较差的电学性能仍然是金刚石半导体材料应用的主要挑战.本文报道了一种高压热扩散法用于金刚石的n型掺杂,该方法利用高压来减小磷原子和碳原子之间的体积差.这种方法可以在金刚石的晶格位置实现磷原子的有效掺杂和电离.制备的磷掺杂金刚石在室温(300 K)下表现出任何已知磷掺杂金刚石单晶中观察到的最低电阻率(2Ωcm)和最高电子浓度(2.27×10^(18)cm^(-3)).高压热扩散法将为金刚石n型掺杂提供一种有效的方法,这可能在未来金刚石基半导体器件的设计和制备中发挥重要作用.

关 键 词：DIAMOND phosphorus doping n-type semiconductor high-pressure thermal diffusion ionization efficiency 

分 类 号：O469[理学—凝聚态物理]