All electrical switching of 2D multiferroic heterostructure  

作　　者：Kian Ping Loh 

机构地区：[1]Department of Chemistry,National University of Singapore,Singapore 117546,Singapore

出　　处：《Science China Materials》2025年第4期1303-1304,共2页中国科学(材料科学)(英文版)

摘　　要：The emergence of generative artificial intelligence (AI) has catalyzed a new wave of intelligence development, resulting in significant growth in computing capabilities and intensifying competition for advanced computational power. In-Memory computing based on magnetic random-access memory (MRAM)offers advantages such as high speed and low power consumption is primed for enabling high-performance AI computing[1-6].

关 键 词：advanced computational power electrical switching memory computing intelligence development d multiferroic heterostructure high speed generative artificial intelligence magnetic random access memory 

分 类 号：TP3[自动化与计算机技术—计算机科学与技术]