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作 者:武小坡[1] 肖连辉 李阳斌 吴家锋[3] WU Xiaopo;XIAO Lianhui;LI Yangbin;WU Jiafeng(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China;DFH Satellite Co.Ltd.,Beijing 100094,China;The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China)
机构地区:[1]南京电子技术研究所,南京210039 [2]航天东方红卫星有限公司,北京100094 [3]中国电子科技集团公司第十三研究所,石家庄050051
出 处:《航天器环境工程》2025年第2期214-220,共7页Spacecraft Environment Engineering
摘 要:针对GaN器件在宇航应用中可靠性数据匮乏的问题,开展地面加速寿命试验研究。通过对GaN器件的失效模式和高温退化机理分析,结合阿伦尼乌斯模型,计算得出该型器件的加速寿命试验激活能和加速系数,进而确定了科学合理的试验温度和试验时间。针对某基于GaN器件的星载T/R组件,设计了一种加速寿命试验方法。按照该方法将该T/R组件置于真空罐中进行480 h的加速寿命试验,结果表明,T/R组件的各项电性指标和功能全程均保持正常稳定,有效验证了T/R组件(及其中GaN器件)的长期可靠性,为后续同类星载大功率T/R组件的可靠性评估提供了指导和借鉴。To address the lack of reliability data for GaN devices in aerospace applications,a comprehensive ground-based accelerated life testing program was initiated.Through a detailed analysis of the failure modes and high-temperature degradation mechanisms of GaN devices,combined with the application of the Arrhenius model,the activation energy and acceleration factors for the accelerated life tests of that type of devices were accurately determined.This enabled the establishment of scientifically justified test temperatures and durations.A tailored accelerated life testing methodology was developed for a GaN-based satellite-borne T/R module.In accordance with this methodology,the T/R module underwent 480 hours of accelerated life testing within a vacuum chamber.The results demonstrated that all electrical parameters and functionalities of the T/R module remained consistently normal and stable throughout the entire test period,thereby effectively validating the longterm reliability of the T/R module and the inside GaN devices.This study offers reference for the reliability assessment of similar high-power satellite-borne T/R modules in future applications.
关 键 词:星载高功率T/R组件 GaN功率器件 加速寿命试验 可靠性评估
分 类 号:TN73[电子电信—电路与系统] V416.5[航空宇航科学与技术—航空宇航推进理论与工程]
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