碳化硅MOSFET有源门极驱动的电压电流过冲快速检测电路设计  

Design of Fast Detection Circuit for Voltage and Current Overshoot of Active Gate Drive of Silicon Carbide MOSFETs

作　　者：王俊波 张殷 唐琪 王正磊 陈钰凯 刘平[3] WANG Junbo;ZHANG Yin;TANG Qi;WANG Zhenglei;CHEN Yukai;LIU Ping(Foshan Power Supply Bureau of Guangdong Power Grid Co.,Ltd.,Foshan,Guangdong,528010,CHN;Digital Grid Research Institute of China Southern Power Grid,Guangzhou,510555,CHN;College of Electrical and Information Engineering,Hunan University,Changsha,410082,CHN)

机构地区：[1]广东电网有限责任公司佛山供电局,广东,佛山528010 [2]南方电网数字电网研究院股份有限公司,广州510555 [3]湖南大学电气与信息工程学院,长沙410082

出　　处：《固体电子学研究与进展》2025年第2期16-22,共7页Research & Progress of SSE

基　　金：南方电网公司科技项目(GDKJXM20222585)。

摘　　要：碳化硅金属氧化物半导体场效晶体管(Silicon carbide metal-oxide-semiconductor field-effect transistor,SiC MOSFET)因其高工作频率和耐高温等优势得到广泛应用。然而,SiC MOSFET驱动电路存在的开关高电气应力、电压电流超调和开关振荡等问题降低了变流器的可靠性。为了提高系统的可靠性,本文提出了一种碳化硅MOSFET有源门极驱动的电压电流过冲快速检测电路。首先,分析SiC MOSFET的开通和关断过程,对漏极电流上升阶段和下降阶段的电压和电流状态设计过冲快速检测电路;然后,为了抑制电压和电流尖峰,设计控制电路动态调节栅极电流;最后,根据原理图确定器件选型方案并搭建测试平台,分析所选器件的工作性能以及自身硬件延时情况。实验结果表明,本文所提设计方案能够快速检测电压和电流过冲状态,并有效抑制电压和电流尖峰。Silicon carbide metal-oxide-semiconductor field-effect transistors(SiC MOSFETs)are widely used due to their advantages of high operating frequency and high temperature resistance.However,high electrical stresses on the switch,voltage-current overshoots and switching oscillations in SiC MOSFETs drive circuits significantly reduce the reliability of the converter.In order to improve the reliability of the system,a fast detection circuit for the overshoot of voltage and current driven by the active gate of SiC MOSFETs was proposed in this paper.Firstly,the turn-on and turn-off processes of SiC MOSFETs were analyzed,and a fast detection circuit was designed for the voltage and current overshoot states in the rising and falling stages of the drain current.Then,in order to suppress voltage and current spikes,a control circuit was designed to dynamically regulate the gate current.Finally,according to the schematic diagram,the device selection scheme was determined and the test platform was built to analyze the working performance of the selected device and its own hardware delay.Experimental results show that the proposed design scheme can quickly detect the voltage and current overshoot states,and effectively suppress the voltage and current spikes.

关 键 词：碳化硅MOSFET 快速检测 有源驱动 硬件延时 

分 类 号：TM46[电气工程—电器]