基于功率合成技术的0.17 THz瓦级固态放大器设计  

Design of a Watt‑level Solid‑state Amplifiers with Power Combining Technology Up to 0.17 THz

作　　者：赵博[1] 成海峰[1] 胡尊月 朱翔[3] 杜佳谕 龚冰[1] ZHAO Bo;CHENG Haifeng;HU Zunyue;ZHU Xiang;DU Jiayu;GONG Bing(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Second Military Representative Office of the Air Force Equipment Department in Nanjing Area,Nanjing,210000,CHN;Key Laboratory of Dynamic Cognitive System of Electromagnetic Spectrum Space,Ministry of Industry and Information Technology,Nanjing University of Aeronautics and Astronautics,Nanjing,211106,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]空军装备部驻南京地区第二军事代表室,南京210000 [3]南京航空航天大学电磁频谱空间认知动态系统工业和信息化部重点实验室,南京211106

出　　处：《固体电子学研究与进展》2025年第2期29-33,共5页Research & Progress of SSE

摘　　要：针对当前太赫兹频段对于大功率固态放大器的工程应用需求,在0.17 THz开展了基于功率合成技术的瓦级固态功率放大器的研究。基于3 dB波导桥结构和太赫兹GaN功放芯片,设计并制作了一种工作在0.17 THz的两芯片封装功率模块,实现了410 mW的典型功率输出。以E面T型结为基础,实现了G波段4路波导功率合成器,工作频率覆盖165~175 GHz,无源合成效率为76%。通过将4个封装功率模块进行合成,最终在165~175 GHz的频率范围内获得了0.82 W以上的输出功率,典型输出功率在175 GHz处达到了1.3 W,有源合成效率为72%。In view of the current engineering application requirements of the high power solid-state amplifier at terahertz(THz)band,the research of 0.17 THz watt-level solid-state power amplifier(PA)with power combining technology was carried out in this paper.Based on 3‑dB waveguide bridge structure and THz GaN power amplifier chips,a two-chip packaged PA module was designed and manufactured with a typical output power of 410 mW.A G-band 4-way waveguide combiner was realized using the E-plane T-junction structure.The tested passive combining efficiency is 76%,covering the frequency range of 155 to 200 GHz.By combining 4 packaged PA modules,the output power of more than 0.82 W is obtained in the frequency range of 165 to 175 GHz,with a typical output power of 1.3 W at 175 GHz,and the active combining efficiency is 72%.

关 键 词：G波段 功率合成技术 E面T型结 固态功率放大器 太赫兹 

分 类 号：TN73[电子电信—电路与系统]