硅基太赫兹压控振荡器研究进展  

Research Progress on Terahertz Voltage‑controlled Oscillators

作　　者：陈尚轩 鲁成健 陈卓恒 成彬彬[1,2] 程序[1,2] CHEN Shangxuan;LU Chengjian;CHEN Zhuoheng;CHENG Binbin;CHENG Xu(Microsystem&Terahertz Research Center,China Academy of Engineering Physics,Chengdu,610299,CHN;Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang,Sichuan,621999,CHN;School of Tropical Agriculture and Forestry,Hainan University,Haikou,570228,CHN)

机构地区：[1]中国工程物理研究院电子工程研究所,四川,绵阳621999 [2]中国工程物理研究院微系统与太赫兹研究中心,成都610299 [3]海南大学热带农林学院,海口570228

出　　处：《固体电子学研究与进展》2025年第2期34-46,共13页Research & Progress of SSE

基　　金：国家重点研发计划资助项目(2020YFB1805702)。

摘　　要：太赫兹技术近年来的快速发展推动着太赫兹振荡器以及压控振荡器的设计与实现。随着半导体工艺(如CMOS,SiGe,GaAs等)的进步,使得高集成度、低功耗、低相位噪声的高频振荡器以及压控振荡器的实现成为可能。本综述将讲述太赫兹振荡器关键技术及其最新研究进展,重点探讨不同类型的太赫兹振荡器设计方法,特别对提高输出功率和调谐范围等方面进行研究。通过对现有文献的综合分析,旨在为研究人员提供关于硅基太赫兹振荡器领域的全景式理解,为未来研究提供参考和指导。The rapid development of terahertz(THz)technology in recent years has driven the design and realization of THz oscillators and voltage-controlled oscillators(VCOs).With the advancement of semiconductor technologies such as CMOS,SiGe,and GaAs,the implementation of high-frequency oscillators and VCOs with high integration,low power consumption,and low phase noise has become feasible.This review discusses the key technologies of THz oscillators and their latest research progress,focusing on the design methods of different types of THz oscillators,particularly research on output power improvement and tuning techniques.Through a comprehensive analysis of existing literature,this paper aims to provide researchers with a panoramic understanding of the field of silicon-based THz oscillators and offer references and guidance for future research.

关 键 词：毫米波通信 毫米波 太赫兹频率 推推振荡器 振荡器阵列 耦合振荡器 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN74TN752