一种基于耦合线功率合成的Ka波段功率放大器  

A Ka‑band Power Amplifier Based on Coupled‑line Power Combining

作　　者：孙晗 杨晓政 何进[1] SUN Han;YANG Xiaozheng;HE Jin(School of Physics and Technology,Wuhan University,Wuhan,430072,CHN)

机构地区：[1]武汉大学物理科学与技术学院,武汉430072

出　　处：《固体电子学研究与进展》2025年第2期61-66,共6页Research & Progress of SSE

基　　金：开放基金资助项目(OCTN-002)。

摘　　要：基于55 nm RF CMOS工艺设计了一款应用于5G毫米波通信的Ka波段功率放大器(Power amplifier,PA)。该PA创新性地采用了基于非对称耦合线的功率合成网络。该网络能够被用于金属层厚度差异较大的工艺,而且具有易于设计、低损耗的特点,有利于提高PA输出功率。此外,本文提出的自适应偏置电路能够根据输入信号功率的大小改变PA的栅极偏置,从而抑制增益压缩效应,提高PA线性度。仿真结果表明,该PA的小信号增益的-3 dB带宽为25.0~28.8 GHz。在1.8 V电源电压下,PA的峰值小信号增益、饱和输出功率和输出1 dB压缩点分别为20.1 dB、19.3 dBm和17.6 dBm。PA的最大功率附加效率为17.1%,核心面积为0.18 mm2。In this paper,a Ka‑band power amplifier(PA)was designed based on a 55‑nm RF CMOS process for 5G millimeter‑wave communications.Using asymmetric couplers,a novel power combining network(PCN)was proposed to be applicable to technology in which metal traces are of different thickness.With such easy‑to‑implement and low‑loss PCN,PA's output power was significantly improved.In addition,PA's gate bias could be changed by the proposed adaptive biasing circuit according to PA's input power thus mitigating the gain compression effect and enhancing linearity.The simulated results show that the PA achieves a small signal gain-3 dB bandwidth of 25.0‑28.8 GHz.With a 1.8 V supply,the PA realizes a 20.1 dB peak small signal gain,a 19.3 dBm saturate output power and a 17.6 dBm 1 dB compression output power.The PA also realizes a maximum power added efficiency of 17.1%and a core area of 0.18 mm².

关 键 词：5G 毫米波 功率放大器 耦合线 分布式巴伦 自适应偏置 

分 类 号：TN432[电子电信—微电子学与固体电子学]