一种灵敏度提高的垂直型霍尔器件及仿真模型  

A Vertical Hall‑effect Device with Improved Sensitivity and Its Simulation Model

作　　者：王双喜 李建强 李良 周林 李杰林 徐跃[1,3] WANG Shuangxi;LI Jianqiang;LI Liang;ZHOU Lin;LI Jielin;XU Yue(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing,210023,CHN;Beijing Smartchip Microelectronics Technology Company Limited,Beijing 102200,CHN;National and Local Joint Engineering Laboratory of RF Integration&Micro?assembly Technology,Nanjing,210023,CHN)

机构地区：[1]南京邮电大学集成电路科学与工程学院,南京210023 [2]北京智芯微电子科技有限公司,北京102200 [3]射频集成与微组装技术国家地方联合工程实验室,南京210023

出　　处：《固体电子学研究与进展》2025年第2期92-96,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(62171233);中国电子学会-智芯科研专项项目(20220370-0090);江苏省研究生科研与实践创新计划项目(SJCX23_0298)。

摘　　要：基于180 nm BCD工艺实现了一种灵敏度提高的五孔垂直型霍尔器件(Five-contact vertical Hall-effect device,FCVHD)。采用掺杂浓度较低且阱深较深的N型漂移区(N-type drift region,NDRF)作为器件有源区,并在器件表面的N~+接触孔之间进行P~+扩散区隔离,有效减小了短路效应,提高了器件的电流相关灵敏度(S_(IV))。同时,在器件有源区四周设计了双PN结保护环,更有效抑制了器件衬底的噪声和干扰。此外,对该器件建立了一种简化的Verilog-A电路仿真模型,该模型仅由非线性电阻、电容和流控电压源组成,考虑了器件的非理想效应,具有高的仿真精度。测试结果表明,该垂直型霍尔器件的S_(IV)达到了24 V/(A·T),比标准CMOS N阱器件的灵敏度提高了2.86倍,同时模型仿真与实测结果达到很好的一致性,相对误差<3.7%,验证了仿真模型的实用性。A sensitivity-improved five-contact vertical Hall-effect device(FCVHD)was fabricated based on a 180 nm BCD process.It employs a low-doped and deep N-type drift region(NDR)as the device's active region and implements P+diffusion isolation between N+contacts on the device surface,which effectively reduces short-circuit effects,thus enhancing the current-related sensitivity(SIV)of the FCVHD.Additionally,dual PN junction guard rings were designed around the device's active region to more effectively suppress substrate noise and interference.Furthermore,a simplified Verilog-A circuit simulation model was developed for the device,which consists of only nonlinear resistors,nonlinear capacitors,and current-controlled voltage sources,considering non-ideal device effects for high simulation accuracy.Measured results demonstrate that the SIV of this vertical Hall device reaches 24 V/(A·T),with a 2.86 times improvement compared to the sensitivity of the standard CMOS N-well device.The model simulation results exhibit good consistency with experimental measurements,with a<3.7%relative error,validating its practicality.

关 键 词：五孔垂直型霍尔器件(FCVHD) N型漂移区(NDRF) 仿真模型 电流相关灵敏度 

分 类 号：TN382[电子电信—物理电子学]