光伏多级逆变器装置的性能分析和优选  

Performance Analysis and Optimization of Photovoltaic Multi-level Inverter Device

作　　者：刘怡 张颢 沈天盛 王燕 陈佳盈 LIU Yi;ZHANG Hao;SHEN Tiansheng;WANG Yan;CHEN Jiaying(Jinshan Electric Power Supply Company of State Grid Shanghai,Shanghai 200540,China)

机构地区：[1]国网上海市电力公司金山供电公司,上海200540

出　　处：《微型电脑应用》2025年第2期61-64,共4页Microcomputer Applications

基　　金：国网科技项目(B30932220002)。

摘　　要：工业电力电子设备是可再生能源发电转换系统的关键部分,其能量效率对逆变器设计产生了挑战。为此,提出一种用于光伏(PV)系统中多电平逆变器的实用设计和部件优选的方法。通过分析不同安装地点的实际环境因素、PV电池模型、转换技术,实现对电力电子设备的精确功率损耗建模。基于该模型和T型逆变器拓扑结构,实现对PV系统实际运行工况的功率损耗计算及效率预测。对传统的硅绝缘栅双极晶体管(Si-IGBT)、碳化硅金属氧化物半导体场效应晶体管(SiC-MOSFET)、GaN半导体进行了仿真分析。算例结果表明,所提方法有助于规划人员评估PV系统的技术和经济安装效益,可以更容易地实现电力电子设备组件和技术的优选。Industrial power electronic equipment is the key part of the renewable energy generation conversion system.Its energy efficiency requirement poses a challenge to the inverter design.The paper presents a method for practical design and component optimization of multi-level inverter in photovoltaic(PV)system.The accurate power loss modeling of power electronic equipment is realized by analyzing the actual environmental factors of different installation sites,PV cell models and conversion technologies.Based on the model and T-type inverter topology,the power loss calculation and efficiency prediction of PV system under actual operating conditions are realized.The traditional silicon insulated gate bipolar transistor(Si-IGBT),silicon carbide metal oxide semiconductor field-effect transistor(SiC-MOSFET),GaN semiconductors are simulated and analyzed.The example results show that the proposed method is helpful for planners to evaluate the technical and economic installation benefits of PV system.It can more easily realize the optimization of power electronic equipment components and technologies.

关 键 词：光伏 逆变器 功率损耗 拓扑 效率 

分 类 号：TM743[电气工程—电力系统及自动化]