基于隧穿调制的多级痛觉感受器模拟  

Tunneling Modulated Multilevel Nociceptor Analogs

作　　者：杨成东 李欣蔚 苏琳琳 童佳颖 刘天一 Yang Chengdong;Li Xinwei;Su Linlin;Tong Jiaying;Liu Tianyi(School of Electronics and Information Engineering,Wuxi University,Wuxi 214105,Jiangsu,China)

机构地区：[1]无锡学院电子信息工程学院,江苏无锡214105

出　　处：《光学学报》2025年第1期186-193,共8页Acta Optica Sinica

基　　金：国家自然科学基金(62106111);无锡市科技创新创业资金“太湖之光”科技攻关计划(K20231001);无锡学院引进人才科研启动项目(2021r011;2021r012)。

摘　　要：目前,利用感存算一体的神经形态器件模拟痛觉感受器介导的突触行为仍存在较多的挑战,比如所有的痛觉感受器只能进行痛觉发生的模拟,无法对痛觉级别进行精确分类,这对于构建复杂的痛觉管理系统是不利的。通过对器件结构的合理设计,实现一种易于制造、可重构和性能显著的多级痛觉感受器。利用100 nm氮化硅隧穿层的两次隧穿模式跳变来操纵两次突触运行模式的跳变,类似于二级痛觉警报。阈值管理的模式跳变可以通过高强度和重复刺激来触发。表征了阈下的常见突触感知行为和刺激强度,以及持续刺激触发的两级阈上模式跳变等器件行为。Objective Compute-in-sensor neuromorphic devices allow in situ weight iteration and computation within hardware,significantly reducing power consumption and latency caused by data transmission.These devices are essential building blocks for developing adaptive perception and interaction systems in the next generation of robotics.Pain,as the first line of defense against potential harm,serves as an alarm triggered by external noxious stimuli,initiating nociceptive responses to prevent further damage.However,there remain considerable challenges in stimulating nociceptor-mediated synaptic behavior.For instance,current nociceptor devices primarily simulate pain generation but cannot accurately classify pain levels,which hampers the development of adaptive pain alarm systems.Through the rational design of device structures,we have developed a multilevel nociceptor with several advantages,including ease of fabrication,reconfigurability,and clear threshold behavior.The device utilizes two tunneling-mode jumps in a 100 nm Si_3N_(4) layer to modulate two synaptic mode transitions,akin to a two-level pain alarm system.These threshold-managed transitions are triggered by highintensity and repetitive stimuli.In this paper,we characterize subthreshold normal synaptic perception behaviors and suprathreshold two-level nociceptor-mediated synaptic operations in response to varying stimulus intensities and continuous stimulation.Methods Our device is based on a back-to-back Schottky junction synaptic structure with an inserted 100 nm Si_3N_(4) tunneling layer.The preparation process involves the deposition of a C8-BTBT film on a Si_3N_4/Si O_(2)/Si substrate,followed by the transfer of two Au electrodes(each 50 μm×40 μm onto its surface.The “stamping” method is used to position the Au stripes,with channel widths and lengths of approximately 40 and 20 μm,respectively.Both Au electrodes must attach to the same crystal domain to avoid defects from step lines.The device operates through the management of three distinct tunnel

关 键 词：神经形态器件 多级痛觉感受器 隧穿模式 模式跳变 阈值管理 

分 类 号：TN303[电子电信—物理电子学]