超宽禁带半导体Ga_(2)O_(3)功率器件、紫外光电器件的新进展(续)  

New Progress in Ultra Wide Bandgap Semiconductor Ga_(2)O_(3)Power Devices and Ultraviolet Optoelectronics(Continued)

作　　者：赵正平 Zhao Zhengping(China Electronics Technology Group Corporation,Beijing 100846,China;National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团有限公司,北京100846 [2]固态微波器件与电路全国重点实验室,石家庄050051

出　　处：《半导体技术》2025年第5期417-434,共18页Semiconductor Technology

摘　　要：在电动汽车等绿色能源应用和发展的带动下,宽禁带半导体材料SiC、GaN电力电子产业成为新一代产业的发展主流,而有可能成为下一代电力电子学发展的超宽禁带半导体材料金刚石、Ga_(2)O_(3)和AlN已成为目前前瞻性的科研热点,其中Ga_(2)O_(3)在这三种半导体材料中具有单晶尺寸发展最快、成本最低和功率二极管性能已接近工程化等特点,预判Ga_(2)O_(3)在电力电子和紫外光电器件两个领域具有提前工程化和后续产业化的发展趋势。介绍了Ga_(2)O_(3)在上述两个领域,如Ga_(2)O_(3)功率二极管、Ga_(2)O_(3)功率FET、Ga_(2)O_(3)紫外光电器件的最新进展。其中包括Ga_(2)O_(3)功率二极管在肖特基势垒二极管(SBD)、异质结二极管和MOS二极管方面的结构设计创新、工艺创新和可靠性;也包括Ga_(2)O_(3)功率FET在MESFET、MOSFET、异质结FET、无极FET和立体晶体管等方向的器件结构设计创新、工艺创新和可靠性;此外,还包括Ga_(2)O_(3)紫外光电器件在光电晶体管、薄膜光电导体、光电二极管、金属-半导体-金属(MSM)光电探测器和异质结构光电探测器等方向的器件结构设计创新、工艺和机理的创新。分析和评价了Ga_(2)O_(3)在电力电子和紫外光电器件两个领域从科研向工程化的发展态势。Driven by the application and development of green energy such as electric vehicles,the power electronics industry based on wide bandgap semiconductormaterials like SiC and GaN has emerged as the mainstream of the new-generation industry.Meanwhile,ultra wide bandgap semiconductor materials such as diamond,Ga_(2)O_(3)and AlN,which have the potential to shape the next-generation of power electronics,have become the current cutting-edge research focuses.Among these,Ga_(2)O_(3)stands out with the fastest development in single-crystal size,the lowest cost,and power diode performance approaching engineering requirements.It is predicted that Ga_(2)O_(3)exhibits a trend of early engineering and subsequent industrialization in both the power electronics and ultraviolet optoelectronic devices fields.The latest advancements of Ga_(2)O_(3)in these two fields,including Ga_(2)O_(3)power diodes,Ga_(2)O_(3)power FETs,and Ga_(2)O_(3)ultraviolet optoelectronic devices are indroduced.This encompasses innovations in structure design,process,and reliability of Ga_(2)O_(3)power diodes in Schottky barrier diodes(SBDs),heterojunction diodes,and MOS diodes;it also includes innovations in device structure design,process,and reliability of Ga_(2)O_(3)power FETs in MESFETs,MOSFETs,heterojunction FETs,zero-gap FETs,and three-dimensional transistors.Additionally,it covers innovations in device structure design,process,and mechanism of Ga_(2)O_(3)ultraviolet optoelectronic devices in phototransistors,thin-film photoconductors,photodiodes,metal-semiconductor-metal(MSM)photodetectors,and heterostructure photodetectors.An analysis and evaluation of the development trend of Ga_(2)O_(3)from research to engineering in the power electronics and ultraviolet optoelectronic devices fields is provided.

关 键 词：超宽禁带半导体 Ga_(2)O_(3) 功率二极管 功率FET 紫外光电器件 

分 类 号：TN303[电子电信—物理电子学] TN304.21