具有双层空穴传输层的高亮度QLED  

High-Brightness QLEDs with Dual Hole Transport Layers

作　　者：方文惠 阮钰菁 廖靖妍 罗东向 郑华 刘佰全 Fang Wenhui;Ruan Yujing;Liao Jingyan;Luo Dongxiang;Zheng Hua;Liu Baiquan(School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510275,China;School of Chemistry,Guangzhou University,Guangzhou 510006,China;College of Electronic Engineering and Intelligence,Dongguan Institute of Technology,Dongguan 523808,China)

机构地区：[1]中山大学电子与信息工程学院,广州510275 [2]广州大学化学学院,广州510006 [3]东莞理工学院电子工程与智能化学院,广东东莞523808

出　　处：《半导体技术》2025年第5期435-442,共8页Semiconductor Technology

基　　金：国家自然科学基金(62375057);广东省基础与应用基础研究基金(2023B1515120046,2022A1515140064,2024A1515012019)。

摘　　要：量子点发光二极管(QLED)凭借其高效率、高稳定性以及优异的色纯度,在显示与照明领域备受关注,但QLED在电荷注入平衡方面仍面临挑战。探讨了不同单层空穴传输层(HTL)及双层HTL结构对QLED性能的影响,并揭示其发光机理。通过结合4,4’,4”-三(咔唑-9-基)三苯胺(TCTA)的电子阻挡能力与4,4’-环己基二[N,N-二(4-甲基苯基)苯胺](TAPC)的高空穴传输能力设计出双层HTL,相应器件具有显著的性能优势。优化后的绿色QLED在7 V电压下实现了高达115929 cd/m^(2)的亮度,展现出巨大的应用潜力。进一步通过Silvaco仿真验证了器件的发光机理,结果表明双层HTL形成了阶梯式的能级结构,有效降低了空穴注入势垒,并抑制电子泄漏,从而实现了电荷平衡的优化。本研究为开发高性能的QLED提供了一种有效的方法。Quantum dot light-emitting diodes(QLEDs)have attracted significant attention in the fields of display and lighting due to their high efficiency,excellent stability,and superior color purity.However,challenges persist in achieving charge injection balance.The effects of different single hole transport layer(HTL)and dual HTLs structures on the performance of QLEDs were investigated and their emission mechanisms were revealed.By combining the electron-blocking ability of 4,4',4'-tris(carbazol-9-yl)-triphenylamine(TCTA)with the high hole transport ability of 4,4'-cyclohexylidene-bis[N,N-bis(4-methylphenyl)aniline](TAPC),the dual HTLs were designed,and the corresponding device exhibit significant performance advantages.The optimized green QLEDs achieve a brightness of up to 115929 cd/m~2 at 7 V,demonstrating immense application potential.Furthermore,Silvaco simulations validate the emission mechanism of the device.The results show that the dual HTLs form a stepwise energy level structure,which effectively reduces the hole injection barrier and suppresses electron leakage,thereby optimizing charge balance.This study provides an effective approach for the development of high-performance QLEDs.

关 键 词：发光二极管(LED) 量子点(QD) 电荷平衡 高亮度 空穴传输层(HTL) 

分 类 号：TN383.1[电子电信—物理电子学]