基于NiO/GaN核壳纳米柱阵列异质结的高性能自供电紫外光电探测器  

A Self-Powered High-Performance UV Photodetector Based on Core-Shell NiO/GaN Nanorod Array Heterojunction

作　　者：唐鑫 柳志成 江弘胜 李国强[1] Tang Xin;Liu Zhicheng;Jiang Hongsheng;Li Guoqiang(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510640,China;Tung Wah Senior High School,Dongguan 523690,China)

机构地区：[1]华南理工大学材料科学与工程学院,广州510640 [2]东莞市东华高级中学,广东东莞523690

出　　处：《半导体技术》2025年第5期443-448,共6页Semiconductor Technology

基　　金：国家重点研发计划(2022YFB3604500,2022YFB3604501)。

摘　　要：针对紫外光电探测器在自供电模式下光探测性能差的难题,提出了一种基于NiO/GaN核壳结构的纳米柱阵列异质结的自供电紫外光电探测器。采用分子束外延(MBE)法制备了分立、均匀的GaN纳米柱阵列,在此基础上通过简单的高温热氧化法合成了均匀的NiO薄层,形成了异质结核壳结构。得益于GaN纳米柱阵列异质结的结构优势,如高吸光特性和高载流子迁移率,制备的紫外光电探测器在没有任何电源的情况下,在365 nm波长紫外光照射下展现出高响应度(350 mA/W)、短响应(上升/下降)时间(36 ms/42 ms)、高电流开关比(2.1×10^(5))和高紫外-可见光抑制比(2.9×10^(4)),性能优于目前报道的薄膜型异质结紫外光电探测器,在下一代紫外光探测中显示出巨大的应用潜力。A self-powered UV photodetector based on NiO/GaN core-shell structure with nanorod array heterojunction was proposed to address the difficult problem of poor photodetection performance of UV photodetectors in self-powered mode.Discrete and uniform GaN nanorod array was prepared by molecular beam epitaxy(MBE)method.On this basis,a uniform thin layer of NiO was synthesized by a simple high-temperature thermal oxidation method to form a heterogeneous core-shell structure.Benefitting from the structural advantages of GaN nanorod array heterojunction such as high light absorption characteristics and high carrier mobility,the prepared UV photodetector exhibits high responsivity of 350 mA/W,short response(rising/falling)time of 36 ms/42 ms,high on/off current ratio of 2.1×10^(5)and high UV-vis rejection ratio of 2.9×10^(4)under UV irradiation of 365 nm wavelength without any power supply,which is better than that of the thin film heterojunction UV photodetectors reported at present.It shows great application potential in the next generation of UV photodetection.

关 键 词：NiO/GaN 紫外光电探测器 纳米柱阵列异质结 分子束外延(MBE) 高温热氧化法 自供电光探测 

分 类 号：TN364.2[电子电信—物理电子学]