TAZ与LS-97对铜CMP协同缓蚀效应  

Synergistic Corrosion Inhibition Effect of TAZ and LS-97 on Cu CMP

作　　者：贺斌 高宝红 霍金向 李雯浩宇 贺越 王建树 He Bin;Gao Baohong;Huo Jinxiang;Li Wenhaoyu;He Yue;Wang Jianshu(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Hebei Collaborative Innovation Center of Microelectronic Materials and Technology in Ultra Precision Processing,Tianjin 300130,China;Hebei Engineering Research Center of Microelectronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]河北省微电子超精密加工材料与技术协同创新中心,天津300130 [3]河北省微电子专用材料与器件工程研究中心,天津300130

出　　处：《半导体技术》2025年第5期473-480,共8页Semiconductor Technology

基　　金：国家自然科学基金(61704046);河北省自然科学基金(F2022202072)。

摘　　要：极大规模集成电路(GLSI)中多层铜互连的化学机械抛光(CMP)是推动微电子技术发展的关键工艺之一。抑制剂是实现铜晶圆表面平坦化的重要因素,而表面活性剂可以改善铜晶圆的表面质量,因此抑制剂和表面活性剂的复配使用是研究的热点。通过抛光实验、电化学实验、接触角实验和表面表征测试,深入分析了LS-97和TAZ复配使用对铜表面的影响。研究结果表明,500 mg/L LS-97和2 mmol/L TAZ复配使用可以降低铜的抛光速率、改善润湿性、减少表面缺陷和降低表面粗糙度。LS-97和TAZ复配使用时,吸附层更致密、更稳定,铜晶圆表面质量更好。The chemical mechanical polishing(CMP) of multilayer copper interconnects in giant large-scale integration circuit(GLSI) is a key processes driving the development of microelectronics technology.Inhibitors are crucial for achieving the surface planarization of copper wafers,while surfactants improve surface quality.Therefore,the compound use of inhibitors and surfactants has become a key research focus.The effects of the compound use of LS-97 and TAZ on the copper surface were thoroughly analyzed through polishing experiment,electrochemical experiment,contact angle experiment and surface characterization tests.The research results show that the combined use of 500 mg/L LS-97 and2 mmol/L TAZ can achieve good effects such as lowering the polishing rate of copper,improving wettability,reducing surface defects and lowering surface roughness.It can be concluded that when LS-97 and TAZ are used in combination,the adsorption layer becomes denser and more stable,and the surface quality of copper wafers is better.

关 键 词：化学机械抛光(CMP) 铜 缓蚀剂 表面活性剂 复配 

分 类 号：TN305.2[电子电信—物理电子学]