RF detection of split-gate modes in Si-MOS quantum dots  

作　　者：Ning Chu Sheng-Kai Zhu Ao-Ran Li Chu Wang Wei-Zhu Liao Gang Cao Hai-Ou Li Guo-Ping Guo 楚凝;祝圣凯;李傲然;王储;廖伟筑;曹刚;李海欧;郭国平

机构地区：[1]CAS Key Laboratory of Quantum Information,University of Science and Technology of China(USTC),Hefei 230026,China [2]CAS Center for Excellence in Quantum Information and Quantum Physics,University of Science and Technology of China,Hefei 230026,China [3]Hefei National Laboratory,University of Science and Technology of China,Hefei 230088,China [4]Origin Quantum Computing Company Limited,Hefei 230088,China

出　　处：《Chinese Physics B》2025年第4期296-302,共7页中国物理B(英文版)

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.92165207,12474490,12034018,and 92265113);the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302300);the USTC Tang Scholarship.

摘　　要：Radio frequency(RF)reflectometry is an effective and sensitive technique for detecting charge signal in semiconductor quantum dots,and its measurement bandwidth can reach the MHz level.However,in accumulation mode devices,the presence of parasitic capacitance makes RF reflectometry more difficult.The universal approach is relocating the ion implantation region approximately 10μm from the center of the single-electron transistor(SET)and optimizing the design of the accumulation gates.But,this method puts forward more stringent requirements for micro-nano fabrication processing.Here,we propose a split-gate structure that enables RF reflectometry when the ion-implanted region and the ohmic contact are farther from the SET center.In Si-MOS devices,we employ a split-gate structure to achieve RF detection,with the ion-implanted region located 150μm away from the center of the SET.Within an integration time of 140 nanoseconds,we achieved a readout fidelity exceeding 99.8%and a detection bandwidth of over 2 MHz.This is an alternative solution for micro-nano fabrication processing that cannot achieve ion implantation areas closer to the center of the chip,and is applicable to various silicon-based semiconductor systems.

关 键 词：silicon-based quantum computing Si-MOS radio-frequency readout 

分 类 号：O469[理学—凝聚态物理]