Non-negligible influence of vacancies and interlayer coupling on electronic properties of heavy ion irradiated SnSe_(2)FETs  

作　　者：Shifan Gao Siyuan Ma Shengxia Zhang Pengliang Zhu Jie Liu Lijun Xu Pengfei Zhai Peipei Hu Yan Li 高诗凡;马思远;张胜霞;朱彭靓;刘杰;徐丽君;翟鹏飞;胡培培;李燕

机构地区：[1]Northwest Normal University(NWNU),Lanzhou 730070,China [2]Institute of Modern Physics,Chinese Academy of Sciences(CAS),Lanzhou 730000,China

出　　处：《Chinese Physics B》2025年第4期494-499,共6页中国物理B(英文版)

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.12375261,12175287,12205350,and 62234013);the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2022424).

摘　　要：Influences of swift heavy ion(SHI)irradiation induced defects on electronic properties of the bulk SnSe_(2)based FETs are explored.Latent tracks and amounts of Se vacancies in the irradiated SnSe_(2)were confirmed.Red shift of the A1g peak indicates that the resonance frequency of the phonons is reduced due to the defect generation in SnSe_(2).The source–drain current Ids increased at ion fluence of 1×10^(10)ions·cm^(-2),which was attributeded to the irradiation caused Se vacancies,which hence increases the concentration of conduction electrons.The carrier mobility was about 16.9 cm^(2)·V^(-1)·s^(-1)for the devices irradiated at ion fluence of 1×10^(9)ions·cm^(-2),which benefited from heavy ion irradiation enhanced interlayer coupling.The mechanism of device performance optimization after irradiation is discussed in detail.This work provides evidence that,given the electronic properties of two-dimensional material-based device,vacancies and interlayer coupling effects caused by SHI irradiation should not be ignored.

关 键 词：heavy ion irradiation electronic transport in nanoscale materials structures radiation damage semiconductor devices 

分 类 号：TN386[电子电信—物理电子学]