Effect of copper/tungsten heterophase interface on radiation resistance: Insights from atomistic simulations  

作　　者：Wen Chen Min Li Bao-Qin Fu Tun Chen Jie-Chao Cui Qing Hou 陈文;李敏;付宝勤;陈暾;崔节超;侯氢

机构地区：[1]Key Laboratory of Radiation Physics and Technology of the Ministry of Education,Institute of Nuclear Science and Technology,Sichuan University,Chengdu 610064,China

出　　处：《Chinese Physics B》2025年第4期501-508,共8页中国物理B(英文版)

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.12105194);the Natural Science Foundation of Sichuan Province of China(Grant Nos.2022NSFSC1251 and 2022NSFSC1265).

摘　　要：Nanostructured materials have demonstrated superior radiation-damage tolerance compared to their coarse-grained counterparts,contributing to the extended lifespan of nuclear materials.However,the mechanisms underlying this enhanced irradiation resistance remain unclear.In this study,we present atomistic simulations to investigate the impact of Cu/W heterophase interface on the evolution of irradiation-induced defects.The simulation results reveal that the Cu/W interfaces can act as defect sinks,effectively trapping self-interstitial atoms(SIAs).Furthermore,the interface demonstrates both the interstitial emission and interstitial transfer mechanisms,wherein the trapped W SIAs facilitate the emission of Cu atoms from the interface to the Cu side.These emitted Cu SIAs can promote defect recombination on the Cu side,leading to a reduced defect concentration in the Cu/W nanomultilayers.Consequently,these combined mechanisms contribute to a lower overall concentration of irradiation-induced defect,thereby enhancing the radiation resistance of Cu/W nanomultilayers.

关 键 词：molecular dynamics Cu/W nano-multilayers interstitial transfer mechanism radiation resistance 

分 类 号：O571[理学—粒子物理与原子核物理]