Gate leakage mechanisms in Al_(2)O_(3)/SiN/AlN/GaN MIS-HEMTs on Si substrates  

作　　者：Hui-Lin Li Jie-Jie Zhu Ling-Jie Qin Si-Mei Huang Shi-Yang Li Bo-Xuan Gao Qing Zhu Xiao-Hua Ma 李惠琳;祝杰杰;秦灵洁;黄思美;李诗洋;高渤轩;朱青;马晓华

机构地区：[1]National Engineering Research Center of Wide Band-gap Semiconductor,School of Microelectronics,Xidian University,Xi’an 710071,China

出　　处：《Chinese Physics B》2025年第4期528-533,共6页中国物理B(英文版)

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.62188102,62174125,and 62131014).

摘　　要：This study investigates the gate leakage mechanisms of AlN/GaN metal–insulator–semiconductor high-electronmobility transistors(MIS-HEMTs)fabricated on silicon substrate with Al_(2)O_(3)/SiN as stacked gate dielectrics,analyzing behaviors across high and low temperature conditions.In the high-temperature reverse bias region(T>275 K,V_(G)<0 V),Poole–Frenkel emission(PFE)dominates at low electric fields,while trap-assisted tunneling(TAT)is the primary mechanism at medium to high electric fields.The shift from PFE to TAT as the dominant conduction mechanism is due to the increased tunneling effect of electrons as the electric field strength rises.Additionally,TAT is found to be the main gate leakage mechanism under low-temperature reverse bias(T<275 K,V_(G)<0 V).At lower temperatures,the reduction in electron energy causes the emission process to rely more on electric field forces.Furthermore,under forward bias conditions at both high and low temperatures(225 K<T<375 K,V_(G)>0 V),conduction is primarily dominated by defect-assisted tunneling(DAT).

关 键 词：AlN/GaN MIS-HEMTs gate leakage mechanism trap-assisted tunneling(TAT) 

分 类 号：TN386[电子电信—物理电子学]