Band alignment of heterojunctions formed by PtSe_(2)with doped GaN  

作　　者：Zhuoyang Lv Guijuan Zhao Wanting Wei Xiurui Lv Guipeng Liu 吕卓阳;赵桂娟;魏婉婷;吕秀睿;刘贵鹏

机构地区：[1]School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China

出　　处：《Chinese Physics B》2025年第4期535-542,共8页中国物理B(英文版)

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61874108);the Fundamental Research Funds for the Central Universities(Grant No.lzujbky-2024-04);the Gansu Provincial Scientific and Technologic Planning Program(Grant No.22ZD6GE016).

摘　　要：In order to investigate the effect of different doping types on the band alignment of heterojunctions,we prepared PtSe_(2)/n-GaN,PtSe_(2)/p-GaN,and PtSe_(2)/u-GaN heterojunctions by wet transfer technique.The valence band offsets(VBO)of the three heterojunctions were measured by x-ray photoelectron spectroscopy(XPS),while the PtSe_(2)/n-GaN is 3.70±0.15 eV,PtSe_(2)/p-GaN is 0.264±0.15 eV,and PtSe_(2)/u-GaN is 3.02±0.15 eV.The conduction band offset(CBO)of the three heterojunctions was calculated from the material bandgap and VBO,while the PtSe_(2)/n-GaN is 0.61±0.15 eV,PtSe_(2)/p-GaN is 2.83±0.15 eV,and PtSe_(2)/u-GaN is 0.07±0.15 eV.This signifies that both PtSe_(2)/u-GaN and PtSe_(2)/p-GaN exhibit type-Ⅰband alignment,but the PtSe_(2)/n-GaN heterojunction has type-Ⅲband alignment.This signifies that the band engineering of PtSe_(2)/GaN heterojunction can be achieved by manipulating the concentration and type of doping,which is significantly relevant for the advancement of related devices through the realization of band alignment and the modulation of the material properties of the PtSe_(2)/GaN heterojunction.

关 键 词：van der Waals heterojunction x-ray photoelectron spectroscopy band alignment gallium nitride platinum diselenide 

分 类 号：O469[理学—凝聚态物理]