基于微转印方法实现III-V-on-SOI异质集成光电探测器  

Heterogeneous Integrated III-V-on-SOI Photodetector Using Micro-transfer Printing Method

作　　者：王兆璁 全志恒 郑施冠卿 朱岩 叶楠[1] 陆梁军 周林杰[3,4] 宋英雄[1] WANG Zhaocong;QUAN Zhiheng;ZHENG ShiGuanqing;ZHU Yan;YE Nan;LU Liangjun;ZHOU Linjie;SONG Yingxiong(Key Laboratory of Specialty Fiber Optics and Optical Access Networks,Shanghai University,Shanghai 200444,China;Process Center,JFS Laboratory,Wuhan 430074,China;Advanced Optical Communication System and Networks,Shanghai Jiao Tong University,Shanghai 200240,China;SJTU-Pinghu Insitute of Intelligent Optoelectronics,Shanghai Jiao Tong University,Pinghu 314299,China;Infraytech Limited Company,Beijing 100037,China)

机构地区：[1]上海大学特种光纤与光接入网重点实验室,上海200444 [2]九峰山实验室工艺中心,武汉430074 [3]上海交通大学区域光纤通信网与新型光通信系统国家重点实验室,上海200240 [4]上海交通大学平湖智能光电研究院,浙江平湖314299 [5]北京英孚瑞半导体科技有限公司,北京100037

出　　处：《光通信研究》2025年第2期86-92,共7页Study on Optical Communications

摘　　要：【目的】硅基光电子平台具有低成本制造、高集成密度和高传输速度的优势,但受限于硅材料的光电性能,单晶硅难以直接实现光纤通信O/C波段的高响应度探测。InP基InGaAs材料在光纤通信的O/C波段具有1.0×10 cm^(-2)的吸收系数,可制成具有较高吸收效率的有源光探测器件。因此,通过异质集成的方式,将InGaAs/InP有源器件与硅基波导结合成为基于硅光子平台,是实现高效光电探测器的一个可行方向。大晶格失配及热膨胀系数的差异使得通过外延生长技术实现大规模集成变得非常困难,而键合集成技术中的微转印技术可以实现微米尺度量级的集成,进而低成本、高效率地制备出异质集成器件。而在该技术的现有制备流程中,通过刻蚀牺牲层实现器件与衬底分离的方案需要极高的工艺积累。文章的研究目的是在保留探测器原衬底的情况下,利用微转印方法实现InGaAs/InP雪崩光电探测器件(APD)与绝缘体上硅(SOI)光栅耦合器(GC)的直接键合集成。【方法】文章研究了微转印方法的基本原理,搭建了微转印实验平台。通过微转印方法实现了III-V族APD样片与SOI GC的异质集成,基于测试结果评估微转印方法的可行性。【结果】通过微转印集成获得的异质集成光电探测器,响应带宽约为4 GHz,暗电流约为13 nA(@-13 V),与该样片集成前的性能测试数据基本一致。受到耦合损耗的影响,集成后整体结构的响应度为7.3×10^(-3) A/W(@-25 V)。排除输入端光纤-GC的损耗之后,集成器件的响应度约为1.8×10^(-2) A/W(@-25 V)。【结论】文章验证了基于微转印方法实现III-V族APD与平台进行异质集成的可行性。通过保留InP衬底,使微米级×微米级尺度的APD与SOI GC通过InP衬底/硅基光子平台界面间的范德华力实现了直接键合集成,以此简化了微转印工艺的实施流程,从而提高了集成效率。通过实验可以验证,集成前/�【Objective】Silicon-based optoelectronic platforms have the advantages of low-cost manufacturing,high integration density,and high transmission speed.However,due to the photoelectric properties of silicon materials,it is difficult for monocrystalline silicon to directly achieve high responsivity detection in the O/C band of optical fiber communication.InP-based InGaAs material has an absorption coefficient of 1.0×10 cm^(-2)in the O/C band of optical fiber communication,which can be used as an active photodetector with high absorption efficiency.Therefore,the combination of InGaAs/InP active devices and silicon-based waveguides through heterogeneous integration is a feasible direction to achieve high-efficiency photodetectors based on silicon photonic platforms.The large lattice mismatch and the difference in thermal expansion coefficient make it hard to achieve large-scale integration through epitaxial growth technology.The micro-transfer printing technology in bonding integration technology can achieve integration on the micron scale,thereby enabling low-cost,high-efficiency preparation of heterogeneous integrated devices.In the existing preparation process of this technology,the scheme of separating the device from the substrate by etching the sacrificial layer requires extremely high process accumulation.The purpose of this paper is to realize the direct bonding integration of InGaAs/InP Avalanche Photodetector Device(APD)and Silicon on Insulator(SOI)Grating Coupler(GC)by micro-transfer method while retaining the original substrate of the detector.【Methods】This paper studies the basic principle of micro-transfer printing method and builds a micro-transfer printing experimental platform.The heterogeneous integration of the III-V APD sample and the GC on the SOI wafer is realized by the micro-transfer method.The feasibility of the micro-transfer method is evaluated based on the test results.【Results】The response bandwidth of the heterogeneous integrated photodetector ob-tained by micro-transfer integ

关 键 词：硅基光电子 异质集成 微转印 光电探测器 

分 类 号：TN206[电子电信—物理电子学]