集成低势垒二极管的1.2 kV SiC MOSFET器件功耗  

Power consumption of 1.2 kV SiC MOSFET with integrated Low-Barrier Diode

作　　者：孙佳萌 付浩 魏家行 刘斯扬 孙伟锋[1,2] SUN Jiameng;FU Hao;WEI Jiaxing;LIU Siyang;SUN Weifeng(School of Integrated Circuit,Southeast University,Nanjing Jiangsu 210096,China;National ASIC System Engineering Research Center,Southeast University,Nanjing Jiangsu 210096,China)

机构地区：[1]东南大学集成电路学院,江苏南京210096 [2]东南大学国家ASIC工程中心,江苏南京210096

出　　处：《太赫兹科学与电子信息学报》2025年第4期309-316,共8页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金资助项目(62004037)。

摘　　要：针对SiC金属-氧化物半导体场效应晶体管(MOSFET)在功率模块续流过程中引起的高续流损耗问题,提出集成低势垒二极管的SiC MOSFET(LBD-MOS)结构。对LBD-MOS和传统的SiC MOSFET(CON-MOS)在相同面积下的总功耗进行研究,仿真结果表明,LBD-MOS的续流压降U_(F)为1.6 V,比CON-MOS降低了50%;LBD-MOS的开关损耗E_(switch)为187.3μJ,比CON-MOS降低了6%;在工作频率为10 kHz,占空比为50%的工作条件下,LBD-MOS的总功耗比CON-MOS降低了22.6%。LBD-MOS适用于续流占比高于50%、开关频率不高于1 MHz的工作条件。To address the issue of high freewheeling losses caused by SiC Metal-Oxide-Semiconductor Field-Effect Transistors(MOSFETs)during the freewheeling process in power modules,an integrated Low-Barrier Diode SiC MOSFET(LBD-MOS)structure is proposed.The total power consumption of LBD-MOS and the conventional SiC MOSFET(CON-MOS)under the same area is investigated.Simulation results show that the freewheeling voltage drop(U_(F))of LBD-MOS is 1.6 V,which is 50%lower than that of CON-MOS;the switching loss(E_switch)of LBD-MOS is 187.3μJ,which is 6%lower than that of CON-MOS.Under operating conditions with a frequency of 10 kHz and a duty cycle of 50%,the total power consumption of LBD-MOS is reduced by 22.6%compared to that of CON-MOS.LBD-MOS is suitable for applications where the freewheeling ratio is higher than 50%and the switching frequency does not exceed 1 MHz.

关 键 词：SiC金属-氧化物半导体场效应晶体管(MOSFET) 集成低势垒二极管 导通功耗 续流功耗 开关功耗 反向恢复功耗 

分 类 号：TN432[电子电信—微电子学与固体电子学]