GaN HEMT器件动态导通电阻的测试电路  

Investigation on the test circuit of the dynamic on-state resistance of GaN HEMTs

作　　者：刘梦丽 李胜 马岩锋 刘斯扬[1] 孙伟锋[1] LIU Mengli;LI Sheng;MA Yanfeng;LIU Siyang;SUN Weifeng(National ASIC System Engineering Research Center,Southeast University,Nanjing Jiangsu 210096,China)

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,江苏南京210096

出　　处：《太赫兹科学与电子信息学报》2025年第4期317-321,339,共6页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金资助项目(62204034);中国博士后科学基金资助项目(2022TQ0061)。

摘　　要：氮化镓高电子迁移率晶体管(GaN HEMTs)的异质外延工艺导致GaN HEMT器件存在陷阱效应,造成器件在连续瞬态工作条件下的导通电阻产生动态变化(简称动态导通电阻),并高于静态条件下的理论值,对功率系统稳定性造成危害,因此需对GaN HEMT器件动态导通电阻高效、精确的测试方法进行研究。本文介绍了GaN HEMT器件动态导通电阻的产生机理,结合实际测试需求,设计了一种基于超高速电压反馈型运算放大器的新型钳位电路。采用Pspice仿真工具对该新型钳位电路进行仿真,并与其他现有常用钳位电路进行对比。结果表明该电路可以更快速准确地读取器件由关态转为开态后的漏压值,实现对不同偏置电压和频率下器件导通电阻的表征。The heteroepitaxial process of Gallium Nitride High Electron Mobility Transistors(GaN HEMTs)leads to the presence of a trapping effect in GaN HEMT devices.This effect causes dynamic changes in the on-resistance of the devices under continuous transient operating conditions,known as dynamic on-resistance,which is higher than the theoretical value under static conditions.This dynamic on-resistance can pose a threat to the stability of power systems.Therefore,it is necessary to investigate efficient and accurate testing methods for the dynamic on-resistance of GaN HEMT devices.The mechanism of dynamic on-resistance generation in GaN HEMT devices is introduced in this paper.In combination with practical testing requirements,a novel clamping circuit based on an ultra-high-speed voltage feedback operational amplifier is designed.The Pspice simulation tool is employed to simulate this new clamping circuit and compare it with other commonly used existing clamping circuits.The results show that this circuit can more rapidly and accurately read the drain voltage of the device after it transitions from the off-state to the on-state.It also enables the characterization of the device's on-resistance under different bias voltages and frequencies.

关 键 词：氮化镓高电子迁移率晶体管(GaN HEMTs) 陷阱效应 动态导通电阻 钳位电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]