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作 者:Saed Mahmoud Alilou Mohammad Maalandish Ataollah Samadian Pouya Abolhassani Seyed Hossein Hosseini Mohammad-Hassan Khooban
机构地区:[1]Faculty of Electrical&Computer Engineering,University of Tabriz,Tabriz,East Azerbaijan 51666,Iran [2]Engineering Faculty,Near East University,North Cyprus,Mersin 10,Turkey [3]Aarhus University,Aarhus,Midtjylland 8000,Denmark
出 处:《CSEE Journal of Power and Energy Systems》2025年第2期739-749,共11页中国电机工程学会电力与能源系统学报(英文)
摘 要:This paper presents a non-isolated DC-DC boost converter using voltage lift techniques. The proposed structure offers continuous input current. Substantial voltage gain along-side low voltage stress across semiconductors in this topology contribute to utilizing an MOSFET with lower RDS-ON and devices with low nominal voltage values. Consisting of a switch makes the control procedure of the converter uncomplicated. Voltage analysis for the converter has been done in continuous and discontinuous conduction modes (CCM)-(DCM). Furthermore, current calculation, design process and comparison study are provided. Dynamic performance of the proposed circuit is scrutinized by applying the state space average technique and small signal model. In order to accredit performance of the converter, an archetype with 26V input and 222V output voltages and approximately 196W power level at 50 kHz switching frequency has been built and tested.
关 键 词:High voltage gain non-isolated DC-DC converter voltage lift
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