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作 者:翟荣刚 ZHAI Ronggang(School of Electronic and Information Engineering,Anhui Vocational and Technical College of Posts and Telecommunications,Hefei 230031,China)
机构地区:[1]安徽邮电职业技术学院电子与信息工程学院,安徽合肥230031
出 处:《黄山学院学报》2025年第2期25-30,共6页Journal of Huangshan University
基 金:安徽省自然科学研究重点项目(2023AH053064)。
摘 要:为了解决常规线性调制开关电源存在的输入电压范围较小、内部低压电源不能驱动高压器件、可靠性较差等问题,采用了一种耐高压、导通阻抗低的N型MOS器件,并利用带隙基准电路、LDLR电路和负压使能电路,设计了使开关电源输入电压范围为4~32 V,输出电压最高可达36 V,输出电流为5 A的线性电路。同时为了提升系统工作的可靠性,在电源电路中还设置了电流泄放通道,加快输出电压的升降。In order to solve the problems existing in the conventional linear modulation switching power supply,such as small input voltage range,low voltage power supply can not drive high voltage devices,and poor reliability,we choose a very low high voltage resistance N-type MOSFET as the power device of the switching power supply.Using high voltage drive,charge pump circuit,negative voltage enable control circuit and other methods,a high power linear modulation switching power supply is designed.The input voltage range of the switching power supply can reach 432 V,and the discharge channel is set in the system.On this basis,it is accelerated so that it can rise and decrease rapidly,so as to achieve better work stability.
分 类 号:TN710[电子电信—电路与系统]
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