半导体Ag@Co-MOF掺杂材料的合成及表征  

The Synthesis and Characterization ofSemiconductor Ag@Co-MOF Doping Material

作　　者：张钢强 张军 孙朋涛 李鹏云 张美丽[2] ZHANG Gangqiang;ZHANG Jun;SUN Pengtao;LI Pengyun;ZHANG Meili(Xinjiang Shinning Environmental Protection Energy Company Limited,Hami Xinjiang 963000,China;College of Chemistry and Chemical Engineering,Yan′an University,Yan′an Shanxi 716000,China)

机构地区：[1]新疆宣力环保能源股份有限公司,新疆哈密963000 [2]延安大学化学与化工学院,陕西延安716000

出　　处：《江西师范大学学报(自然科学版)》2025年第1期80-85,共6页Journal of Jiangxi Normal University(Natural Science Edition)

基　　金：新疆维吾尔自治区重大科技专项课题(2021A01002-3);榆林市科技局科学技术研究课题(CXY-2021-126)资助项目。

摘　　要：该文通过水热法合成了2维层状配位聚合物[Co(tib)(mpda)(H_(2)O)_(2)]·H_(2)O(Co-MOF)(tib=均苯三咪唑,mpda=间苯二乙酸).使用超声粉碎法将Co-MOF层状结构剥离形成2维纳米片,再利用光还原法将Ag粒子沉积在Co-MOF表面上,形成Ag@Co-MOF掺杂材料.Ag粒子的掺杂有利于加速光生载流子的输运,避免电子(e^(-))和空穴(h^(+))的复合,使电荷转移速率加快.Co-MOF的带隙能为3.4 eV,Ag@Co-MOF掺杂材料的带隙能降至2.8 eV,且可见光的吸收度明显增强,这说明该材料可作为半导体光催化剂材料.XPS、SEM、TEM等表征结果表明Ag@Co-MOF掺杂材料被成功合成.Two-dimensional layered coordination polymer[Co(tib)(mpda)(H_(2)O)_(2)]·H_(2)O(Co-MOF)(tib=benzene triimidazole,mpda=1,3-phenyldiacetic acid)is synthesized by hydrothermal method.The Co-MOF layers are stripped using ultrasonic stripping to form two-dimensional nanosheets,and Ag particles are deposited on the Co-MOF surface by photoreduction to form Ag@Co-MOF doped material.The doping of Ag particles is beneficial to accelerate the transport of photoborne carriers,avoid the recombination of electrons(e^(-))and hole(h^(+)),and accele-rate the charge transfer rate.The band gap energy of Co-MOF is 3.4 eV,and the band gap energy of Ag@Co-MOF doped material is reduced to 2.8 eV,and the absorption of visible light is significantly enhanced,indicating that the material can be used as a semiconductor photocatalyst material.XPS,SEM and TEM prove the successful synthesis of Ag@Co-MOF doped materials.

关 键 词：MOFS 水热合成 晶体结构 掺杂材料 表征 半导体 催化材料 

分 类 号：O65[理学—分析化学]