4H-SiC双极型光电晶体管电子束辐照效应  

Electron radiation effects on a 4H-SiC bipolar phototransistor

作　　者：叶思恩 黄丹阳 付祥和 赵小龙[1,2] 贺永宁[1,2] Ye Sien;Huang Danyang;Fu Xianghe;Zhao Xiaolong;He Yongning(Faculty of Electronic and Information Engineering,Xi’an Jiaotong University,Xi’an 710049,China;The Key Lab of Micro-Nano Electronics and System Integration,Xi’an Jiaotong University,Xi’an 710049,China)

机构地区：[1]西安交通大学电子信息学部,西安710049 [2]西安交通大学微纳电子与系统集成重点实验室,西安710049

出　　处：《强激光与粒子束》2025年第5期29-35,共7页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(62004158)。

摘　　要：当光电晶体管偏置在5 V下,辐照前,其暗电流约为58 nA,对365 nm紫外光的响应度约为31 A/W;器件经过10 MeV电子束辐照后,暗电流的数量级下降到10-11 A,响应度下降到原来的1/8左右。辐照后,器件的响应度受偏置电压的影响明显,随着偏置电压的减小而下降,当光电晶体管偏置在3 V下,响应度下降到2.25 A/W。电子束辐照还会影响紫外探测器的开关响应,使响应的总时间变长。结合光电晶体管工作时的电路模型,电子束辐照后引起光产生电流减小、晶体管增益下降和串联电阻增大是引起光电探测器紫外响应性能退化的主要原因。The electron irradiation effect of a 4H-SiC npn bipolar transistor UV detector is investigated in this paper.When the phototransistor is biased at 5 V,before irradiation,its dark current is about 58 nA,and its responsivity to 365 nm UV light is about 31A/W.After the device is irradiated by a 10 MeV e-beam,the order of magnitude of the dark current decreases to 10-11 A,and the responsivity decreases to about 1/8 of the original one.After irradiation,the responsivity of the device is significantly affected by the bias voltage:it decreases as the bias voltage decreases,and when the phototransistor is biased at 3 V,the responsivity decreases to 2.25 A/W.E-beam irradiation also affects the switching response of the UV detector,which results in a longer total time of response.In this paper,the circuit model of phototransistor operation is established,and the decrease of light generation current,the decrease of transistor gain and the increase of series resistance caused by electron beam irradiation are the main reasons for the degradation of photodetector’s UV response performance.

关 键 词：4H-SiC探测器 双极型晶体管 电子束辐照 响应电流 紫外探测 

分 类 号：TN364[电子电信—物理电子学]