Cs3Bi2I9薄膜的制备及其太阳能电池的数值模拟  

Thin-films preparation of Cs_(3)Bi_(2)I_(9) and numerical simulation of solar cells

作　　者：任雨轩 柏晨 丁伟 方栋 密保秀 高志强[2] REN Yuxuan;BAI Chen;DING Wei;FANG Dong;MI Baoxiu;GAO Zhiqiang(School of Materials Science and Engineering,Nanjing University of Posts&Telecommunications,Nanjing 210023,China;Institute of Advanced Materials(IAM),Nanjing University of Posts&Telecommunications,Nanjing 210023,China)

机构地区：[1]南京邮电大学材料科学与工程学院,南京210023 [2]南京邮电大学先进材料研究院,南京210023

出　　处：《复合材料学报》2025年第3期1412-1424,共13页Acta Materiae Compositae Sinica

基　　金：南京邮电大学有机电子与信息显示国家重点实验室项目(2009DS690095)。

摘　　要：近年来,人们致力于探索新型无铅无机钙钛矿材料,旨在追赶铅基钙钛矿太阳能电池的性能。在本工作中,首次使用分层交替蒸镀BiI_(3)和CsI薄膜的方式成功制备了质量较好的无铅无机Cs_(3)Bi_(2)I_(9)薄膜,并通过真空蒸镀将KI掺杂到Cs_(3)Bi_(2)I_(9)薄膜中,获得的薄膜带隙减小、激子寿命增加。将上述两种薄膜作为活性层,制备了结构为氧化铟锡导电玻璃(ITO)/酞菁铜(CuPc)/活性层/C60/Al的太阳能电池。为了提高这类太阳能电池的性能,使用SCAPS-1D太阳能电池模拟软件对上述结构的器件进行数值模拟,以获得最佳器件的参数。模拟器件各功能层的厚度经过优化且增加活性层供体掺杂浓度后,最大功率转换效率只有8.62%。然后,选取其他合适的空穴传输材料以及电子传输材料以优化器件结构,模拟出的最佳器件表现出25.66%的功率转换效率。这项工作为后续实验制备Cs_(3)Bi_(2)I_(9)薄膜太阳能电池提供了理论指导。In recent years,there has been a concerted effort to explore novel lead-free inorganic perovskite materials with the aim of matching the performance of lead-based perovskite solar cells.In this work,relatively high quality lead-free inorganic Cs_(3)Bi_(2)I_(9)films were successfully prepared for the first time using a layered alternating evaporation technique for BiI_(3) and CsI films.By doping KI into the Cs_(3)Bi_(2)I_(9)films through vacuum evaporation,it results in a reduced bandgap and an increased exciton lifetime.The above two thin-films were used as active layers to fabricate solar cells with the structure of indium tin oxide(ITO)/copper(II)phthalocyanine(CuPc)/active layer/C60/Al.In order to improve the performance of this type of solar cell,numerical simulations of devices based on Cs_(3)Bi_(2)I_(9)thin-films were conducted using the SCAPS-1D solar cell simulation software to obtain the optimal device parameters.After optimizing the thickness of each functional layer of the simulated device and increasing the doping concentration of the donor in the active layer,only a modest maximum power conversion efficiency of 8.62%was achieved.Subsequently,other suitable hole and electron transport materials were chosen to optimize the device structure.The best simulated device exhibited a power conversion efficiency of 25.66%.This work provides theoretical guidance for the subsequent experimental preparation of Cs_(3)Bi_(2)I_(9)thin-film solar cells.

关 键 词：钙钛矿 Cs_(3)Bi_(2)I_(9) 分层交替蒸镀 薄膜太阳能电池 SCAPS-1D 

分 类 号：TM914.42[电气工程—电力电子与电力传动] TB333[一般工业技术—材料科学与工程]