全有机三明治结构PI-ANFm-PI薄膜的制备及其介电性能  

Preparation of all-organic sandwich-structured PI-ANFm-PI films and their dielectric properties

作　　者：段广宇 胡凤英 郑雨露 梁莹浩 石宜蕊 胡祖明[3] DUAN Guangyu;HU Fengying;ZHENG Yulu;LIANG Yinghao;SHI Yirui;HU Zuming(College of Materials Engineering,Henan University of Engineering,Zhengzhou 450007,China;Henan Engineering Technology Research Center for Fiber Preparation and Modification,Zhengzhou 450007,China;State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University,Shanghai 201620,China)

机构地区：[1]河南工程学院材料工程学院,郑州450007 [2]河南省纤维制备与改性工程技术研究中心,郑州450007 [3]东华大学纤维材料改性国家重点实验室,上海201620

出　　处：《复合材料学报》2025年第3期1468-1478,共11页Acta Materiae Compositae Sinica

基　　金：国家重点研发项目(2021YFB3700101);河南工程学院博士培育基金(D2021009)。

摘　　要：为了打破聚合物电介质材料介电常数和击穿强度间的内禀矛盾关系,优化其在高温、强电场环境中的介电性能和击穿强度。本文采用浸渍提拉法,基于聚酰亚胺(PI)溶液和芳纶纳米纤维薄膜(ANFm)构筑了具有三明治结构的全有机PI-ANFm-PI(P-A-P)复合电介质薄膜。ANFm表面粗糙度的降低以及P-A-P复合薄膜内部电子-空穴对的构建有效抑制了漏电流的形成。当PI溶液浓度为7wt%时,P-A-P复合薄膜在25℃和150℃下的击穿强度分别达411.6 MV/m和350.7 MV/m,较ANFm分别提升了58.4%和44.7%;此外,由于空间电荷极化强度的降低,P-A-P复合薄膜的介电稳定性和绝缘性能明显改善。上述研究结果表明:在ANFm表面形成高绝缘层有助于改善ANFm的击穿强度以及降低其内部漏电流密度,有望为开发新型全有机高温电介质薄膜提供新方法和新思路。For breaking the endowed paradox between dielectric constant and breakdown strength of polymer dielectric films and optimizing the dielectric properties and breakdown strength at high temperatures under electric field,polyimide(PI)solution and aramid nanofiber film(ANFm)were utilized to construct all-organic sandwichstructured PI-ANF-PI(P-A-P)dielectric films via"dipping and pulling"process.Due to the top and bottom PI layers reduced the surface roughness of ANFm as well as the formation of electron-hole pairs,the leakage current density of the P-A-P film was effectively suppressed.When the concentration of PI solution was 7wt%,the breakdown strength of P-A-P film reached 411.6 MV/m and 350.7 MV/m at 25℃and 150℃,respectively,which was 58.4%and 44.7%higher than that of single-layer ANFm.Moreover,on account of the reduction of space-charge polarization,the dielectric stability and insulating performance of P-A-P film significantly improved.The obtained results demonstrate that the insulating layers on both surfaces of ANFm contribute to improving the breakdown strength and decreasing the leakage current density.Hence,this work provides a novel approach and a new idea for the development of all-organic high-temperature dielectric films.

关 键 词：聚酰亚胺 芳纶纳米纤维 三明治结构 电介质薄膜 介电性能 

分 类 号：TB332[一般工业技术—材料科学与工程]