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作 者:邓玲娟[1] 袁荣华 胡颖茹 高樊季洁 邓旭欢 王磊 王嘉怡 DENG Lingjuan;YUAN Ronghua;HU Yingru;GAO Fanjijie;DENG Xuhuan;WANG Lei;WANG Jiayi(School of Chemistry and Chemical Engineering,Xianyang Normal University,Xianyang 712000,Shaanxi,China)
机构地区:[1]咸阳师范学院化学与化工学院,陕西咸阳712000
出 处:《咸阳师范学院学报》2025年第2期26-31,共6页Journal of Xianyang Normal University
基 金:国家级大学生创新创业训练计划项目(202410722027)。
摘 要:层状Ti_(3)C_(2)T_(x)以其卓越的导电性、良好的亲水性以及可调节的表面特性,在能源存储领域备受关注。借助刻蚀和离子交换技术制备了4种具有不同层间距的阳离子插层Ti_(3)C_(2)T_(x)材料(H^(+)-Ti_(3)C_(2)T_(x)、K^(+)-Ti_(3)C_(2)T_(x)、NH_(4)^(+)-Ti_(3)C_(2)T_(x)和TMA^(+)-Ti_(3)C_(2)T_(x)),利用XRD、SEM和XPS表征了材料的结构与形貌,通过三电极体系对制备材料电容性质进行了详细研究。研究结果表明层间距越大,层状Ti_(3)C_(2)T_(x)材料的电容性质越优异,其中TMA^(+)-Ti_(3)C_(2)T_(x)材料在0.5MH_(2)SO_(4)电解质中,当比电流为1A·g^(-1)时,比容量高达265 F·g^(-1),远远高于前驱体H^(+)-Ti_(3)C_(2)T_(x)的比容量(106 F·g^(-1)),且显示出优异的倍率性质。该工作为提升基于MXene材料的电容性能提供了一种有效的策略。Layered Ti_(3)C_(2)T^(x) has garnered significant interest in the energy storage domain owing to its superior electrical conductivity,favorable hydrophilicity,and tunable surface characteristics.Four types of cation intercalated Ti_(3)C_(2)T_(x) materials with different interlayer spacing were prepared using etching and ion exchange techniques.The structure and morphology of these materials were meticulously characterized through X-ray Diffraction(XRD),Scanning Electron Microscopy(SEM),and X-ray Photoelectron Spectroscopy(XPS).Furthermore,their capacitance characteristics were meticulously examined utilizing a three-electrode setup.The results indicate that the larger the interlayer spacing,the more excellent the capacitive properties of the layered Ti_(3)C_(2)T_(x) materials will be.Among them,the TMA^(+)-Ti_(3)C_(2)T_(x) material has a specific capacitance as high as 265 F·g^(-1) when the specific current is 1 A·g^(-1)in 0.5 M H_(2)SO_(4) electrolyte,which is much higher than that of the precursor H^(+)-Ti_(3)C_(2)T_(x)(106 F·g^(-1)),and it also exhibits excellent rate performance.This work proposes an effective strategy for enhancing the capacitance performance of MXene-based materials.
关 键 词:Ti_3C_2T_x MXene 层间距 电容性质
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