单层n型MoS_(2)/p型c-Si太阳电池背场的模拟优化  

Simulation and optimization of the back field of monolayer n-type MoS_(2)/p-type c-Si solar cells

作　　者：张研研[1] ZHANG Yanyan(Department of Physical Science and Technology,Bohai University,Jinzhou 121000,China)

机构地区：[1]渤海大学物理科学与技术学院,辽宁锦州121000

出　　处：《沈阳师范大学学报(自然科学版)》2025年第1期6-9,共4页Journal of Shenyang Normal University:Natural Science Edition

基　　金：辽宁省科技厅自然科学基金资助项目(XLYC2007141)。;渤海大学研究生教育改革项目(YJG20230001)的支持.

摘　　要：利用美国宾夕法尼亚州立大学研发的一维器件模拟程序AMPS,对n型MoS_(2)/p型c-Si太阳电池的背场进行模拟优化。模拟发现,增加背场后,电池的转换效率明显升高。当背场带隙在1.6~1.8 eV时,电池光伏性能较好,考虑到缺陷态的影响,电池背场应选择带隙为1.6 eV的微晶硅材料。当背接触势垒不同时,背场掺杂浓度的影响规律有所不同。当背场掺杂浓度为5×10^(19)cm^(-3)时,背接触势垒的影响可以忽略。当背场厚度等于4 nm时,能有效形成背场,电池转换效率为27.503%。The back field of n-type MoS_(2)/p-type c-Si solar cells is simulated and optimized by using the one-dimensional device simulation program AMPS developed by Binzhou University.It is found that the conversion efficiency of the cell increases significantly with adding the back field.The photovoltaic performance of the cell is better when the backfield band gap is between 1.6 eV and 1.8 eV.Considering the influence of the defect states,the microcrystalline silicon with band gap of 1.6 eV should be selected.The influence rules of the back field doping concentration are different with different back contact barriers.When the back field doping concentration is 5×10^(19)cm^(-3),the influence of the back contact barrier can be ignored.When the thickness of the back field is 4 nm,the back field can be formed effectively.The conversion efficiency of the cell is 27.503%.

关 键 词：背场 太阳电池 转换效率 

分 类 号：TK511[动力工程及工程热物理—热能工程]