退火温度对溶胶-凝胶法制备二氧化钒薄膜相变性能的影响  

Influence of Annealing Temperature on Phase Transition Properties of Vanadium Dioxide Films Prepared by Sol-Gel Method

作　　者：汪启旭 张化福 Wang Qixu;Zhang Huafu(School of Physics and Optoelectronic Engineering,Shandong University of Technology,ZiBo 255049,China)

机构地区：[1]山东理工大学物理与光电工程学院,山东淄博255049

出　　处：《微纳电子技术》2025年第5期75-79,共5页Micronanoelectronic Technology

摘　　要：以金属钒的有机物(乙酰丙酮氧钒)作为前驱物,利用溶胶-凝胶法并经过475~550℃的后退火处理制备了具有显著金属-绝缘相变特性的纳米二氧化钒薄膜。研究发现,通过改变后退火过程中的温度可对二氧化钒薄膜结构和表面形貌(颗粒形状、颗粒大小和晶界)进行调控,进而实现对二氧化钒薄膜的相变温度、相变幅度以及回线宽度等金属-绝缘相变特性的调控。当退火温度为525℃时,实验制备纳米二氧化钒薄膜的金属-绝缘相变回线宽度高达37.9℃,而且具有低至33.7℃的降温相变温度。本工作为二氧化钒基存储类器件的潜在应用提供了参考。With the organic of vanadium(acetyl acetone vanadium oxygen)as precursor,nanovanadium dioxide films with significant metal-insulator phase transition characteristics were prepared by sol-gel method and post annealing process at 475-550℃.It is found that the structure and surface morphologies(grain shape,grain size and grain boundary)of vanadium dioxide films can be controlled by changing the temperature during the post-annealing process which can regulate the metal-insulator phase transition characteristics including the phase transition temperature,phase transition amplitude and hysteresis width.The metal-insulator phase transition hysteresis width of the nano-vanadium dioxide film at the annealing temperature of 525℃reaches up to 37.9℃,and the transition temperature upon cooling is as low as 33.7℃.The work provides a reference for potential applications of vanadium dioxide film based storage-type devices.

关 键 词：二氧化钒 溶胶-凝胶法 相变 回线宽度 薄膜 

分 类 号：O484.4[理学—固体物理] TN213[理学—物理]