原位诊断铌酸锂晶体生长界面的翻转现象  

In-Situ Diagnosis of Lithium Niobate Crystal Growth Interface Flipping Phenomenon

作　　者：蒋先龙 郑玮涛 朱允中 JIANG Xianlong;ZHENG Weitao;ZHU Yunzhong(Sino-French Institute of Nuclear Engineering&Technology,Sun Yat-Sen University,Zhuhai 519082,China;School of Physics,Sun Yat-Sen University,Guangzhou 510275,China)

机构地区：[1]中山大学中法核工程与技术学院,珠海519082 [2]中山大学物理学院,广州510275

出　　处：《人工晶体学报》2025年第4期533-542,共10页Journal of Synthetic Crystals

基　　金：国家自然科学基金(52372018)。

摘　　要：在提拉法晶体生长过程中,界面翻转是一种频发且隐蔽的破坏性现象,会导致界面失稳和缺陷富集,损害晶体品质。现有的探测技术难以实时获取生长界面状态,界面翻转现象的观测和解析更无从入手。如何在极端高温且敏感的晶体生长环境中捕捉界面翻转过程,是解读生长界面状态、掌握工艺优化策略、提高晶体品质的关键。本文通过界面相本征电动势(GEMF)的时间序列分析,在提拉法晶体炉中成功原位观测到铌酸锂晶体生长的界面翻转过程;并进一步揭示GEMF轨迹的偏移机制,准确解析翻转导致的热质输运起伏。本文提出的GEMF实验方法适用于普遍使用的熔体法晶体生产设备,不仅为规避界面翻转提供了实时判定依据,还归纳了生长界面的稳定控制准则,为生长界面的闭环调控技术提供实时反馈。During Czochralski crystal growth,interface flipping is a frequent and concealed destructive phenomenon that induces interface instability and accumulate defects,ultimately degrading crystal quality.However,even for the widely-used Czochralski method,the interface flipping of a growing boule is unobservable.Therefore,presenting interface flipping process in the extreme high-temperature and sensitive crystal growth environment is crucial for understanding crystal growth,optimizing growth process,and hence improving crystal quality.Herein,benefitting from the time series analysis of growth interface electromotive force(GEMF),the interface flipping process during lithium niobate crystal growth was observed;and the quantitative relationship between GEMF trajectory and heat and mass transfer during interface flipping was revealed.Our GEMF method,applicable to the widely used melt growth furnace,provides real-time determination for interface flipping and offers feedback for interface control as well.

关 键 词：铌酸锂 晶体生长 界面相本征电动势 原位诊断 界面翻转 

分 类 号：O782[理学—晶体学] TQ131.11[化学工程—无机化工]