阴极碳靶电流对物理气相沉积制备ta-C薄膜性能的影响  

Effect of Cathode Carbon Target Current on Properties of ta-C Thin Films Prepared by Physical Vapor Deposition

作　　者：温鑫 李多生[1] 叶寅 徐锋[2] 郎文昌 刘俊红 于爽爽 余欣秀 WEN Xin;LI Duosheng;YE Yin;XU Feng;LANG Wenchang;LIU Junhong;YU Shuangshuang;YU Xinxiu(School of Materials Science and Engineering,Nanchang Hangkong University,Nanchang 330063,China;School of Mechanical and Electrical Engineering,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China;Suzhou Ion-tech Nano Technology Co.,Ltd.,Suzhou 215163,Jiangsu,China)

机构地区：[1]南昌航空大学材料科学与工程学院,南昌330063 [2]南京航空航天大学机电学院,南京210016 [3]苏州艾钛科纳米科技有限公司,江苏苏州215163

出　　处：《材料导报》2025年第10期138-142,共5页Materials Reports

基　　金：国家自然科学基金(51562027;52375441);江西省重点研发计划重点项目(20201BBE51001);江苏省重点研发计划(产业前瞻与关键核心技术)(BE2021055)。

摘　　要：采用物理气相沉积的方法,利用真空阴极离子沉积系统,通过改变阴极碳靶电流在硬质合金表面沉积四面体非晶碳膜(ta-C)薄膜。通过改变阴极碳靶电流(55~95 A),探究电流对ta-C薄膜综合性能的影响,并对ta-C薄膜的表面形态、化学结构、力学性能和摩擦性能等进行了分析。结果显示:阴极碳靶电流为55 A时,薄膜表面最光滑致密,sp^(3)键含量最大为63.5%,摩擦系数最小为0.0193,硬度和弹性模量分别为33.46 GPa和392.34 GPa,获得综合性能优良的ta-C薄膜。Engineering,Nanjing University of Aeronautics and Astronautics;Suzhou Ion-tech Nano Technology Co.,Ltd.;In this work,tetrahedral amorphous carbon(ta-C)film was deposited on the surface of cemented carbide by changing the cathode carbon target current using a vacuum cathode ion deposition system.By changing the cathode carbon target current(55—95 A),the effect of current on the comprehensive properties of ta-C films was explored.The surface morphology,chemical structure,mechanical properties,and friction properties of ta-C films were analyzed.The results showed that when the cathode carbon target current was 55 A,the surface of the film was the smoothest and densest,the sp^(3) hybrid bond content was the maximum 63.5%,the friction coefficient was the minimum 0.0193,and the hardness and elastic modulus were 33.46 GPa and 392.34 GPa respectively.ta-C films with excellent comprehensive properties could be obtained.

关 键 词：阴极碳靶电流 ta-C薄膜 sp^(3)杂化键含量 摩擦性能 力学性能 

分 类 号：TG174[金属学及工艺—金属表面处理]