Trap properties of a novel UV-A persistent phosphor Sr_(3)MgSi_(2)O_8:Ce^(3+)  

作　　者：Guna Doke Guna Krieke Pavels Rodionovs Dace Nilova Andris Antuzevics 

机构地区：[1]Institute of Solid State Physics,University of Latvia,8 Kengaraga Str.,LV-1063,Riga,Latvia

出　　处：《Journal of Rare Earths》2025年第4期676-683,I0002,共9页稀土学报(英文版)

基　　金：supported by the Latvian Council of Science,project"Defect engineering of novel UV-C persistent phosphor materials"(lzp-2021/1-0118)。

摘　　要：For the last few decades,there has been extensive research on the materials that persist to emit optical radiation long after any type of charging has stopped.Most of the established persistent luminescence(PersL)materials emit light in the visible part of the spectrum;however,in recent years,there has been a growing interest in UV-emitting persistent phosphors in recent years.These materials have been tested for various applications,such as photocatalysis,sterilization,and anti-counterfeiting,among others.Here,we report on the X-ray and UV-activated UV-A long PersL of Ce^(3+)-doped Sr_(3)MgSi_(2)O_8 material.We prepared samples with varied Ce^(3+)concentrations using solid-state reaction synthesis in an ambient atmosphere and conducted a thorough investigation using photoluminescence(PL),electron paramagnetic resonance(EPR),and thermally stimulated luminescence(TSL)spectroscopy methods.Our experiments show that the PersL signal of Ce^(3+)in the 300-450 nm range can be detected for at least 16 h when samples are irradiated with X-rays or UV.The TSL analysis reveals multiple discrete charge traps in the material with activation energies between 0.5 and 1.7 eV.Further EPR measurements confirm the presence of four paramagnetic centers.The thermal stability of these centers was analyzed,and it is established that one of these centers(g_(1)=2.0056,g_(2)=1.9981,and g_(3)=1.9926)gradually decays at room temperature,which is correlated with the PersL processes.

关 键 词：AFTERGLOW Thermally stimulated luminescence(TSL) Electron spin resonance(ESR) UV persistent luminescence Rare earths Trap depth 

分 类 号：O482.31[理学—固体物理]