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作 者:王兴权[1] 余洁 袁林森 刘玲丽[1] 谭礼军 朱荣兴 WANG Xingquan;YU Jie;YUAN Linsen;LIU Lingli;TAN Lijun;ZHU Rongxing(School of Physics and Electronic Information,Gannan Normal University,Ganzhou 341000,China)
机构地区:[1]赣南师范大学物理与电子信息学院,江西赣州341000
出 处:《电机与控制学报》2025年第3期177-188,共12页Electric Machines and Control
基 金:江西省学位与研究生教育教学改革研究项目(JXYJG-2022-180);江西省研究生创新专项资金项目(YC2022-s941);江西省主要学科学术和技术带头人项目(20225BCJ22003)。
摘 要:针对介质阻挡放电(DBD)等离子体高压逆变电源的许多参数只能用机械按钮调节,且电源内部封闭容易出现负载不适配的问题,设计了一款STM32驱动的可触摸调控DBD高压逆变电源,其频率、占空比连续可调,以匹配不同类型的DBD负载。电源电路主要包括IGBT半桥逆变主电路、IGBT驱动及隔离电路、过流保护电路和过温保护电路。采用STM32F103ZET6作为主控芯片产生两路脉宽调制信号,信号经过电压放大后输入6N137芯片及图腾柱电路进行光电信号的隔离及功率放大,再驱动2个IGBT开关管G4PH50UD工作。电源利用STM32芯片对电流和温度反馈电压进行采样,根据电压大小来判断是否关闭输出。最后,搭建一台可触摸调控DBD高压逆变电源样机,参数为频率5.5~25 kHz可调,占空比0~40%可调,过温和过流保护关断响应时间0.05~500 ms可调,对等离子体负载进行放电匹配验证了样机的适应性和通用性。Aiming at the problems that many parameters of the dielectric barrier discharge(DBD)plasma high-voltage inverter power supply can only be adjusted by mechanical buttons and the internal closure of the power supply is prone to load mismatch,a STM32-driven touch-regulatable DBD high-voltage inverter power supply was designed with continuously adjustable frequency and duty cycle to match different types of DBD loads.The power supply circuit mainly includes IGBT half-bridge inverter main circuit,IGBT drive and isolation circuit,over-current protection circuit and over-temperature protection circuit.STM32F103ZET6 was used as the main control chip to generate two pulse width modulation signals.The signals were put into the 6N137 chip and totem pole circuit for the isolation of photoelectric signals and power amplification after voltage amplification.Then two IGBT switching tubes G4PH50UD were driven to work.In the power supply the STM32 chip was used to sample the current and temperature feedback voltage,and judge whether to turn off the output according to the voltage.Finally,a prototype of a touch adjustable DBD high-voltage inverter power supply was built with the parameters of frequency 5.5-25 kHz,duty cycle 0-40%,over-temperature and over-current protection shutdown response time 0.05-500 ms(adjustable).The adaptability and universality of the prototype have been verified through discharge matching of the plasma load.
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