Bi系块材中的热激活引起的磁通蠕动  

THERMALLY ACTIVATED FLUX CREEP IN A BISMUTH BASED BULK MATERIAL

作　　者：袁松柳[1] 王玉贵[1] 王顺喜[1] 

机构地区：[1]中国科学院等离子体物理所,合肥230031

出　　处：《低温物理学报》1992年第1期70-74,共5页Low Temperature Physical Letters

摘　　要：实验上测量了具有较高输运 J_c(77K 和零场下,J_c=1750A/cm^2)的 Bi_(1.80)Pb_(0.34)Sr((1.86)Ca_2Cu_3O_y,块材的输运 J_c 和温度及磁场的关系,实验结果在磁通蠕动模型的基础上得以解释,并得到了零场下 T_c 附近和77K 外加磁场下样品的激活能分别为:U(T,0)=87.4(meV)(1—T/T_c)^(1/2)和 U(77K,H)=64+2.82lnH(meV),H 的单位为特斯拉.Transport critical current Jc dependences of temperature and applied magnetic field were measured for a Bi1.80Pb0.34Sr1.8dCa2Cu3Oy, bulk material with relatively high transport Jc(Jc= 1750 A/cm2,77K,0T). The explanation of the experimental results is based upon the flux creep model. The activatipn energy near T'c, zero field and at 77K with field are: U(T,0) = 87.4(meV) (1 - T/Tc)1/2 and U(77K,H) = 64 + 2.821nH, where H is in Tesla, respectively.

关 键 词：铋系 超导体 热激流 磁通蠕动 高TC 

分 类 号：TM261[一般工业技术—材料科学与工程]