Bi系银基带材的临界电流密度  

CRITICAL CURRENT DENSITY Jc OF Ag-SHEATHED COMPOSITE TAPE OF Bi-SYSTEM SUPERCONDUCTOR

作　　者：奚正平[1,2] 周廉[1,2] 吴燧华 陈贞国 冀春霖[1,2] 

机构地区：[1]西北有色金属研究院,宝鸡721014 [2]东北工学院,沈阳110006

出　　处：《低温物理学报》1992年第1期60-62,共3页Low Temperature Physical Letters

基　　金：国家超导中心资助

摘　　要：采用三步反应法制备 Bi 系超导体,研究其银包套复合带的超导性能.实验结果表明,这种粉末的复合带的临界电流密度优于“大混合”粉末的复合带.在适合的热处理和加工条件下,其最优 J_c 值可达1.3×10~4A/cm^2(77K,0T).The critical current density Jc of Ag-sheathed composite tape of Bi-system superconductor prepared by a three-step reaction process was studied. It is found that Jc values of this composite tapes are superior to that of the composite tape prepared by a 'blended mixture method'. The optimum Jc value is over 1.3×104 A/cm2(77K, 0T) at an appropriate heat treatment and processing condition.

关 键 词：超导粉末 银包套 复合带 铋 超导体 

分 类 号：TM263[一般工业技术—材料科学与工程]