Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature-Part Ⅱ Simulation of CVD diamond film growth in C-H system and in Cl-containing systems  

作　　者：XizhongAn YuZhang 等 

机构地区：[1]MaterialsScienceandEngineeringSchool,UniversityofScience＆TechnologyBeijing,Beijing100083,China [2]AppliedScienceSchool,UniversityofScience＆TechnologyBeijing,Beijing100083,China

出　　处：《Journal of University of Science and Technology Beijing》2002年第6期453-457,共5页北京科技大学学报（英文版）

基　　金：This project was supported by National Natural Science Foundation of China (No.59872003).]

摘　　要：The growth of {100}-oriented CVD diamond film under two modifications ofJ-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomicscale. The results were compared both in Cl-containing systems and in C-H system as follows: (1)Substrate temperature can produce an important effect both on film deposition rate and on surfaceroughness; (2) Aomic Cl takes an active role for the growth of diamond film at low temperatures; (3){100}-oriented diamond film cannot deposit under single carbon insertion mechanism, which disagreeswith the predictions before; (4) The explanation of the exact role of atomic Cl is not provided inthe simulation results.The growth of {100}-oriented CVD diamond film under two modifications ofJ-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomicscale. The results were compared both in Cl-containing systems and in C-H system as follows: (1)Substrate temperature can produce an important effect both on film deposition rate and on surfaceroughness; (2) Aomic Cl takes an active role for the growth of diamond film at low temperatures; (3){100}-oriented diamond film cannot deposit under single carbon insertion mechanism, which disagreeswith the predictions before; (4) The explanation of the exact role of atomic Cl is not provided inthe simulation results.

关 键 词：CVD diamond film atomic Cl revised KMC (kinetic monte carlo) method atomic scale simulation 

分 类 号：O484.1[理学—固体物理]