Bi_4Ti_3O_(12)陶瓷及其A和B位掺杂的介电研究  

Dielectric Study on the Doped Bi_4Ti_3O_12 Ceramic

作　　者：姚阳阳[1] 宋春花[1] 包志豪[1] 朱劲松[1] 王业宁[1] 

机构地区：[1]南京大学固体微结构物理重点实验室,江苏南京210093

出　　处：《哈尔滨理工大学学报》2002年第6期22-23,26,共3页Journal of Harbin University of Science and Technology

基　　金：国家自然科学基金(19904005;90207027)

摘　　要：测量了Bi_4Ti_3O_12(BTO)陶瓷及其A和B位掺杂的系列材料介电损耗.在温度损耗谱上观察到一损耗峰,通过氧处理和内耗等相关实验手段,证实该峰(P1峰)是与氧空位有关的弛豫峰.同时观察该峰随不同掺杂类型的变化,分析了BTO陶瓷B位掺杂对铁电性的影响.The dielectric loss of the Bi4Ti3O12 ceramics as well as the effect of doping in A - site and B - site were investigated. A peak(Pl peak) which was confirmed to be relative with the intrinsic oxygen vacancy in the sample was observed in the temperature spectrum. We also studied the variation of the peak with the different types of dopents and analysed the effect of B - site doping on the ferroelectric properties of the ceramic sample.

关 键 词：Bi4Ti3O12陶瓷 介电损耗 B位掺杂 弛豫峰 A位掺杂 铁电性 铁电体 钛酸铋 

分 类 号：TM223[一般工业技术—材料科学与工程] TQ174.[电气工程—电工理论与新技术]