不同掺铁方式对TiO_2薄膜光催化活性的影响  

Effects of iron impurities on photo-catalytic activity of TiO_2 thin films

作　　者：梁园园[1] 李新军[1] 王良焱[1] 李芳柏[1] 柳松[2] 张琦[1] 

机构地区：[1]中国科学院广州能源研究所,广州510070 [2]华南理工大学应用化学系,广州510640

出　　处：《中国有色金属学报》2002年第6期1304-1308,共5页The Chinese Journal of Nonferrous Metals

基　　金：广东省自然科学基金资助项目 ( 0 10 873) ;广东省科技计划项目(A30 40 30 1)

摘　　要：采用溶胶凝胶工艺在普通玻璃表面制备出表面掺铁与体相掺铁的TiO2 薄膜。运用SEM ,XRD和AES等技术研究了复合薄膜的表面特征。以光催化降解甲基橙溶液为模型反应 ,表征薄膜的光催化活性。结果表明 :体相掺铁时 ,薄膜的最佳n(Fe) /n(Ti)为 0 .12 %;表面掺铁时 ,薄膜的最佳n(Fe) /n(Ti)为 1.5 %。表面掺铁薄膜的最佳光催化表观速率常数比体相掺铁的最佳值要高 1.5倍。并从载流子分离效率等方面进行了机理探讨。Surface iron-doped and bulk iron-doped TiO 2 composite thin films deposited on glass substrates were prepared by sol-gel technology. The properties of the films were investigated by means of SEM, XRD and AES. The photo-catalytic activity of films was investigated by using the model reaction of the photo-catalytic degradation of methyl orange. The results show that the optimal n(Fe)/n(Ti) of bulk iron-doped TiO 2 thin films is 0.12%, while that of surface iron-doped TiO 2 thin films is 1.5%. Moreover, the maximum first-order kinetic rate constant, k, of surface iron-doped TiO 2 thin films is more 1.5 times than that of bulk iron-doped TiO 2 thin films. The doping mechanisms were discussed based on the charge carriers separated efficiency theory.

关 键 词：TIO2薄膜 表面掺铁 体相掺铁 二氧化钛薄膜 光催化活性 半导体 

分 类 号：O643.361[理学—物理化学] TN3[理学—化学]