激光二极管抽运的被动调Q Nd^(3+):YAG微晶片激光器及其稳定性  

LD-Pumped Passively Q- Switched Nd3+ : YAG Microchip Laser and Its Stability

作　　者：欧攀[1] 闫平[1] 巩马理[1] 谢韬[1] 

机构地区：[1]清华大学精密仪器系,北京100084

出　　处：《光学学报》2002年第12期1465-1469,共5页Acta Optica Sinica

摘　　要：从理论和实验两个方面研究了连续激光二极管抽运的Cr^(4+):YAG被动调QNd^(3+):YAG微晶片激光器。考虑Cr^(4+):YAG饱和吸收体激发态吸收,推导了连续抽运的被动调Q微晶片激光器的速率方程,分析了微晶片参量对调Q脉冲半峰全宽和峰值功率的影响;提出了实现稳定脉冲输出的微晶片激光器设计原则。在饱和吸收体初始透过率较低(T_0≈40％)的情况下,获得了脉冲峰值功率不稳定性小于±0.7％、脉冲宽度不稳定性小于±1.0％、峰值功率高达千瓦量级的高重复频率激光输出。CW LD-pumped Cr4+:YAG passively Q-switched Nd3+:YAG microchip laser was discussed theoretically and experimentally. The coupled rate equations were derived for passively CW pumped Q-switched microchip laser including excited state absorption (ESA). Influences of the parameters of microchip laser on pulse width (FWHM) and peak power of laser pulse were analyzed. And some efficient design principles for stable output of the microchip laser were given accordingly. With low small-signal transmission of the saturable absorber (T0=40%), experimental results showed that pulse peak power instability was achieved to be less than ±0.7%, pulse width (FWHM) instability was less than ±1.0% and the laser output peak power was more than 1 kW in the LD-pumped passively Q-switched Nd3+:YAG microchip laser.

关 键 词：Q ND^3+:YAG 微晶片激光器 Cr^4:YAG 耦合速率方程 稳定性 激光二极管抽运 被动调Q激光器 

分 类 号：TN248.34[电子电信—物理电子学]