退火对CdS薄膜和CdS纳米晶的电学与光学性质的影响  

Effect of Annealing on Electrical and Optics Properties of CdS Thin Films and Nanocrystals

作　　者：杨一军[1] 杨保华[1] 谢宇[1] 

机构地区：[1]淮北煤炭师范学院物理系,安徽淮北235000

出　　处：《淮北煤师院学报（自然科学版）》2002年第4期26-30,共5页Journal of Huaibei Teachers College(Natural Sciences Edition)

基　　金：安徽省教育厅自然科学基金资助项目(2001kj201zc)

摘　　要：通过喷雾热解获得CdS薄膜,水热法合成CdS纳米晶,在氮气中做了退火处理,发现CdS膜的吸收边随退火温度升高而移动;经暗电阻与温度关系测试,发现CdS薄膜和纳米晶的激活能存在极小值,用载流子衰减时间的变化很好地解释了其缘由;室温喇曼谱中观察到CdS的两个特征峰.CdS thin films and CdS nanocrystals were prepared by spray pyrolysis and h ydrothermal methods,respectively.The as-prep ared samples were annealed under nitrogen.The absorption edge of CdS thin film is shifted with annealing temperature elevated in comparison with that of the bulk CdS.The result of dark resistance as function of temperature indicates t hat there is minimal activation energy of as-synthesize d samples.It can be reasonably expla ined by means of the change of carriers' decay-time.Two charac teristic vibrational peaks of CdS we re observed by Raman spectra at room temperature.

关 键 词：退火 CDS薄膜 CDS纳米晶 光学性质 吸收边 激活能 半导体材料 电学性质 硫化镉 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304.[电子电信—物理电子学]