外腔半导体激光器的实验研究  

STUDY OF EXTERNAL CAVITY SEMICONDUCTOR LASER

作　　者：金杰[1] 郭曙光[1] 吕福云[1] 张光寅[1] 

机构地区：[1]南开大学物理科学学院,天津300071

出　　处：《南开大学学报（自然科学版）》2002年第4期56-59,共4页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：国家攀登计划预研项目基金 ;天津自然基金 ( 99360 0 71 1 );河北省博士基金

摘　　要：本文报道了外腔半导体激光器的一些研究成果 .利用闪耀光栅作反馈元件 ,对 80 8nm波长的半导体激光器形成弱耦合外腔 ,实现了光谱特性较好的窄线宽单模激光输出 ,线宽小于 0 .0 6nm,边模抑制比大于 30 d B,最大输出功率为 35 .4 m W,总的光—光转换效率为 4 6% .通过调整光栅转角 ,可以得到 1 1 .66nm的波长调谐范围 .设计了光栅 -反射镜联动结构 ,使外腔半导体激光器的输出方向不再随调谐而变化 .Some results for external cavity semiconductor laser are reported in this paper. We used a blazed grating as feedback to consist weak coupled external cavity for a cmmercial semiconductor laser at 808nm, improved the output characteristics of the semiconductor laser. For the external cavity semiconductor laser with single longitudinal mode and narrow linewidth, we obtained an output power of 35.4mW and a total optical to optical efficiency of 46%. Its side mode suppression ratio is more than 30dB, and spectrum line width is narrower than 0.06nm. Through turning the blazed grating, the tuning range of wavelength of 11.66nm has been achieved. We designed linkage configuration with a grating and a reflecting mirror to realize that output laser direction dos not changing with the tunable.$$$$

关 键 词：实验研究 弱耦合 窄线宽 可调谐 外腔半导体激光器 谱线宽度 腔长 

分 类 号：TN248.4[电子电信—物理电子学]