FeSiB薄膜的巨磁阻抗和应力阻抗效应研究  

Study of Giant Magneto-impedance and Stress-impedance of FeSiB films

作　　者：茅昕辉[1] 禹金强[1] 周勇[1] 吴茂松[1] 蔡炳初[1] 

机构地区：[1]上海交通大学微纳米科学技术研究院

出　　处：《真空科学与技术》2002年第6期429-433,共5页Vacuum Science and Technology

基　　金：国家自然科学基金资助 (ANo 5 0 2 75 0 96) ;高等学校博士学科点专项科研基金资助 (No 2 0 0 0 0 2 4813 )

摘　　要：软磁材料中存在巨磁阻抗 (giantmagneto impedance ,GMI)效应以及与之相同来源的应力阻抗 (stress impedance ,SI)效应 ,利用这两种效应可以制成具有高灵敏度的微型化的磁场和应力 应变传感器。本文基于传感器的实际应用 ,对图形化的、较大磁致伸缩的FeSiB单层和多层薄膜的巨磁阻抗和应力阻抗效应中频率和退火的影响进行了研究。结果表明 ,对于两种效应 ,经过退火处理的单层和多层膜均可在较低的频率下得到较高的灵敏度 。The soft magnetic FeSiB films with giant magneto impedance (GMI) and stress impedance(SI),which can be used to fabricate highly sensitive micro sensors of magnetic field and stress/strain field,were developed.Influence of frequency and annealing conditions on GMI and SI of the patterned FeSiB single layer and FeSiB/Cu/FeSiB multi layers were studied for the purpose of application exploration.The results show that strong GMI and SI effects can be observed at fairly low frequency for both the single layer and the multi layers after appropriate annealing.We suggest that the multi layers with large SI effect can be a promising material to fabricate high sensitive stress/train micro sensors.

关 键 词：FeSiB薄膜 巨磁阻抗 应力阻抗效应 多层膜 软磁材料 

分 类 号：TM271.2[一般工业技术—材料科学与工程] O484[电气工程—电工理论与新技术]