半导体断路开关及其应用  

Study of Semiconductor Opening Switch and Its Application

作　　者：张适昌[1] 严萍[1] 王珏[1] 

机构地区：[1]中国科学院电工研究所,北京100080

出　　处：《高电压技术》2002年第B12期23-25,共3页High Voltage Engineering

摘　　要：介绍了一种新型的半导体断路开关 ,它采用 P+ - P- N - N+ 的半导体结构 ,可完成亚 ns级的关断 ,关断电流达数 k A、承受反向电压达百 k V、重复频率达数 k Hz。在介绍SOS结构和主要特性的基础上 ,还介绍了基于In this paper, a novel opening switch called semiconductor opening switch(SOS), with P +-P-N-N + semiconductor structure, sub nanosecond interruption time and several kilo ampere interruption currents is introduced. The SOS device shows that its withstand voltage and repetition frequency is high up to several hundred kilo volts and several kilo hertz. The success in the manufacture of the device indicates a considerable progress of pulsed power technology. Besides the structure and main characteristics of the SOS device, the development of the study of pulsed power generator based on SOS effect is also introduced under the expectation of improving the relative technology.

关 键 词：半导体 断路开关 应用 脉冲功率 SOS结构 

分 类 号：TM564[电气工程—电器]