i-GaAlAs/GaAs HIGFETs器件参数的有限元分析  

THE PARAMETER ANALYSIS OF i-GaAlAs/GaAs HIGFETs BY USING FINITE-ELEMENT METHOD

作　　者：顾聪[1] 王德宁[1] 王渭源[1] 

机构地区：[1]中国科学院上海冶金所,上海200050

出　　处：《电子科学学刊》1992年第5期550-554,共5页

基　　金：国家自然科学基金资助课题

摘　　要：本文用有限元法对 i-GaAlAs/GaAs HIGFETs的稳态特性进行了二维数值模拟和分析。为了在有限内存的微机中,进行快速计算,在程序中,对边界条件,网格剖分和初值选取等方面进行了改进。使计算的收敛速度和精度有了提高。可方便地得到器件内部的电位和载流子浓度等物理量的二维分布。其输出特性和实验数据基本吻合。Two dimensional numerical simulation and analysis for the static state characteristics of i-GaAlAs/i-GaAs HIGFETs by using finite-element method are presented. Some improvements have been made on the boundary conditions, mesh generation and estimation of initial values in the program. The electron concentration and potential distribution etc. inside the HIGFETs are computed. The results of its output characteristics are in good agreement with the experimental data.

关 键 词：绝缘栅 场效应 晶体管 有限元 模拟 

分 类 号：TN32[电子电信—物理电子学]