氢还原铅硅酸盐玻璃表面层结构的研究  

STUDY OF THE SURFACE STRUCTURE OF LEAD SILICATE GLASS REDUCED BY HYDROGEN

作　　者：韦亚一[1] 

机构地区：[1]中国科学院电子学研究所,北京100080

出　　处：《电子科学学刊》1992年第6期661-665,共5页

摘　　要：本文应用X光电子能谱仪(XPS)和俄歇电子能谱仪(AES)研究了经烧氢还原后铅硅酸盐玻璃(该玻璃就是微通道板次级电子发射层材料)中各元素浓度随深度的分布;还应用电子探针(EP)研究了体内元素分布,并讨论了不同烧氢还原温度所形成的发射层结构对微通道板电子倍增性能的影响;在此基础上作者提出了新的微通道板次级电子发射层结构。The XPS, AES and EP have been used to study the elemental depth-distributions of secondary eletron emission layer of lead silicate glass reduced by hydrogen. The samples treated at different temperatures have differences in their micro-structures. The effects of different reduced temperature have been discussed, and new model of the layer of secondary electron emitter has been suggested

关 键 词：电子倍增器 硅酸盐玻璃 表面结构 

分 类 号：TN152[电子电信—物理电子学]