940nm无铝双量子阱列阵半导体激光器  

940 nm Aluminum-free Two-quantum-well Array Semiconductor Laser

作　　者：万春明[1] 王慧[2] 曲轶[1] 

机构地区：[1]长春理工大学,吉林长春130022 [2]空军第二航空学院,吉林长春130022

出　　处：《中国激光》2002年第12期1061-1063,共3页Chinese Journal of Lasers

摘　　要：分析了影响列阵半导体激光器极限输出功率的因素。利用MOCVD研制了无铝双量子阱列阵半导体激光器。无铝列阵激光器的峰值波长为 940 2nm ,半峰宽为 2nm ,连续输出功率为 10W ,斜率效率为 1 0 9W A。The factors which influence the ultimate output power of semiconductor laser are analyzed. The aluminum-free two-quantum-well semiconductor laser which wavelength is 940 nm is made by MOCVD. As a result, the peak wavelength of the aluminum-free two-quantum-well semiconductor laser is 940 2 nm, the full-width-half-maximum (FWHM) is 2 nm, the continuous output power is 10 W, and the incremental efficiency is 1 09 W/A.

关 键 词：量子阱 半导体激光器 列阵 

分 类 号：TN248.4[电子电信—物理电子学]